Wet Process Development Engineer

Texas Instruments; Lehi (UT); On-site; USD 110,000 - 150,000; Full time

Job summary

Texas Instruments in Lehi, UT is seeking a Wet Process Development Engineer in TI’s ATD organization to own the development, integration, and qualification of wet etch and clean modules for 28nm SiGe and silicidation device flows, enabling LFAB’s technology ramp from development to high-volume manufacturing.

You will contribute to chemistry formulation, module integration, yield analysis, and production readiness, collaborating across Epi, Lithography, Spacer Films, and CMP teams to ensure

Responsibilities

• Module Integration: Develop and optimize wet process flows for SiGe epi-layer cleaning and selective removal without damage to underlying Si or gate oxide
• Selective Etching: Define chemistries for high-precision isotropic and anisotropic etching with focus on SiGe/Si/silicided film selectivity and undercut control at 28nm geometries
• Yield & Defectivity: Identify root causes with FMEA/8D; implement SPC to support the 28nm yield ramp
• Cross-Functional Collaboration: Partner with Epi, Lithography, Spacer Films, and CMP teams to integrate wet modules into the 28nm flow
• Metrology & Characterization: Use SEM, TEM, ellipsometry, and AFM to characterize surface roughness and etch profiles

Job description

Change the world. Love your job. SiGe strained channel and silicided contact integration at 28nm demands wet etch and clean chemistries that operate at nanometer precision: removing exactly the right material, at exactly the right selectivity, without disturbing adjacent films or device structures. At LFAB, these processes don’t yet exist in production form. You will build them. As a Wet Process Development Engineer in TI’s ATD organization in Lehi, you will own the development, integration, and qualification of wet etch and clean modules for the 28nm SiGe and silicidation device flows which which directly enabling LFAB’s technology ramp from development to high-volume manufacturing. Your work spans the full arc from chemistry formulation through module integration, yield analysis, and production readiness. The wet process modules you develop will run on every wafer at LFAB.

Responsibilities include:

• Module Integration: Develop and optimize wet process flows for SiGe epi-layer cleaning and selective removal without damage to underlying Si or gate oxide
• Selective Etching: Define chemistries for high-precision isotropic and anisotropic etching with focus on SiGe/Si/silicided film selectivity and undercut control at 28nm geometries
• Yield & Defectivity: Identify root causes of process-related defects using FMEA and 8D methodologies; implement Statistical Process Control (SPC) to support the 28nm yield ramp toward high-volume manufacturing
• Cross-Functional Collaboration: Partner with Epi, Lithography, Spacer Films, and CMP teams to ensure seamless integration of wet modules into the full 28nm SiGe and silicidation fabrication flow

• Metrology & Characterization: Utilize SEM, TEM, ellipsometry, and AFM to characterize surface roughness and etch profiles at atomic resolution

  This role requires the ability to manage multiple parallel workstreams under schedule pressure, lead technical discussions with authority, communicate status and risks clearly, and drive alignment across organizational boundaries in a fast-paced technology development environment.