SiGe 28nm Wet Process Engineer - Clean & Etch Innovation

Texas Instruments; Lehi (UT); On-site; USD 110,000 - 150,000; Full time

Job summary

Texas Instruments in Lehi, UT is seeking a Wet Process Development Engineer in TI’s ATD organization to own the development, integration, and qualification of wet etch and clean modules for 28nm SiGe and silicidation device flows, enabling LFAB’s technology ramp from development to high-volume manufacturing.

You will contribute to chemistry formulation, module integration, yield analysis, and production readiness, collaborating across Epi, Lithography, Spacer Films, and CMP teams to ensure

Responsibilities

• Module Integration: Develop and optimize wet process flows for SiGe epi-layer cleaning and selective removal without damage to underlying Si or gate oxide
• Selective Etching: Define chemistries for high-precision isotropic and anisotropic etching with focus on SiGe/Si/silicided film selectivity and undercut control at 28nm geometries
• Yield & Defectivity: Identify root causes with FMEA/8D; implement SPC to support the 28nm yield ramp
• Cross-Functional Collaboration: Partner with Epi, Lithography, Spacer Films, and CMP teams to integrate wet modules into the 28nm flow
• Metrology & Characterization: Use SEM, TEM, ellipsometry, and AFM to characterize surface roughness and etch profiles

Job description

Texas Instruments in Lehi, UT is seeking a Wet Process Development Engineer in TI’s ATD organization to own the development, integration, and qualification of wet etch and clean modules for 28nm SiGe and silicidation device flows, enabling LFAB’s technology ramp from development to high-volume manufacturing.

You will contribute to chemistry formulation, module integration, yield analysis, and production readiness, collaborating across Epi, Lithography, Spacer Films, and CMP teams to ensure