Sr. Product Development Engineer

Micron Technology, Inc; Boise (ID); On-site; USD 100,000 - 130,000; Full time

Job summary

Micron Technology, Inc is seeking a Product Development Engineer 4 in Boise, Idaho. You will be responsible for CPI related issues for Micron’s DRAM memory products and establish package program plans for new fab technology.

The ideal candidate has a Master's degree in a relevant field with at least 60 months of experience. You must understand chip-package interaction and have experience in electrical data analysis related to DRAM/NAND devices.

Qualifications

• Master’s degree in Material Science Engineering, Chemical Engineering, or related field.
• 60 months of experience in the job offered or an Engineering-related occupation.
• Understanding of chip-package interaction including assembly process.

Responsibilities

• Responsible for CPI related issues for Micron’s DRAM memory products.
• Establish package program plans for new DRAM fab technology.
• Coordinate end-to-end reviews for DRAM device/package/module.

Skills

Material Science Engineering

Chip-package interaction (CPI)

DRAM/NAND fabrication knowledge

Electrical data analysis

Education

Master’s degree in relevant field

Job description

Responsibilities

Responsible for CPI related issues for Micron’s DRAM memory products from pathfinding through NPI start up into HVM. Establish package program plans for new DRAM fab technology process nodes specific to DRAM 3DS products, coordinate DRAM device/package/module end-to-end reviews.

Fundamental understanding of key risks in Fab BEOL (Backend of Line), Fab memory array design/processes, wafer probe flows, wafer/device bumping & flip chip assembly technologies, package design, assembly processes, and materials & process interaction effects.

Qualifications

• Master’s degree in Material Science Engineering, Chemical Engineering, Metallurgical Engineering, Electrical Engineering, Physics or related field and 60 months of experience in the job offered or an Engineering‑related occupation.
• DRAM/NAND memory device structure and function.
• Chip‑package interaction (CPI) including assembly process understanding & effects of assembly stresses, package design understanding and effects/influence of design decisions, and DRAM/NAND design/process influences.
• DRAM/NAND device/package design files and incorporation of device design features into CPI and packaging risk assessments.
• DRAM/NAND memory device wafer probe and test flows, including electrical data analysis and correlating electrical failures under various temperature and voltage conditions to CPI physical defects.
• DRAM/NAND memory device fabrication knowledge, specifically including memory array and back‑end‑of‑line fabrication processes.
• DRAM/NAND CPI quality and reliability degradation mechanisms, intrinsic vs extrinsic defects, accelerated reliability stress tests, and sampling statistics to design effective quality and reliability qualification plans and screening tests.

Employment Information

Product Development Engineer 4, Relocation Level: TBD.

Employment Eligibility

Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.