Senior CMOS Device Integration Engineer

Micron Technology, Inc.; Boise (ID); On-site; USD 140,000 - 200,000; Full time

Job summary

Micron Technology, Inc. is seeking a Staff Engineer to advance CMOS device development for next‑generation memory products including DRAM and HBM.

You will solve complex device and integration challenges, analyze electrical performance, and collaborate across Design, TCAD, Modeling, Process, Reliability, and Layout to improve array efficiency, data rates, and product scalability. This role supports AI‑enabled analytics to enhance data interpretation and yield, and provides opportunities to

Qualifications

• Master’s degree or PhD in Electrical Engineering or equivalent practical experience.
• 5+ years of hands‑on experience in advanced CMOS device development, characterization, and/or integration.
• Semiconductor industry experience in advanced logic or DRAM technology development.
• Experience collaborating across engineering fields to solve sophisticated device or process integration challenges.
• PhD in Electrical Engineering with expertise in advanced CMOS technologies (preferred).
• Experience with high‑performance logic technologies at 5nm and beyond (preferred).
• Strong knowledge of semiconductor device physics, process integration, and electrical characterization (preferred).

Responsibilities

• Develop and integrate advanced CMOS devices for next-generation DRAM, HBM, and emerging memory architectures.
• Characterize and analyze CMOS devices and circuits to identify performance opportunities and guide technology improvements.
• Partner with Design, TCAD, Modeling, Process, Reliability, and Layout teams to develop integrated technology solutions.
• Lead technical investigations, communicate findings, and provide recommendations that support technology development decisions.

Skills

CMOS device development

Cross-functional collaboration

Electrical characterization

AI-assisted analytics

Education

Master’s or PhD in Electrical Engineering

Job description

Micron Technology, Inc. is seeking a Staff Engineer to advance CMOS device development for next‑generation memory products including DRAM and HBM.

You will solve complex device and integration challenges, analyze electrical performance, and collaborate across Design, TCAD, Modeling, Process, Reliability, and Layout to improve array efficiency, data rates, and product scalability. This role supports AI‑enabled analytics to enhance data interpretation and yield, and provides opportunities to