Senior AI-Optimized DRAM Architect for High-Performance AI

1000 Micron Technology, Inc.; Richardson (TX); On-site; USD 120,000 - 160,000; Full time

Benefits offered by this job

Medical, dental and vision plans

Paid family leave

Robust paid time-off program

Paid holidays

Job summary

1000 Micron Technology, Inc. is looking for a Senior Member of Technical Staff in Richardson, Texas, to innovate high-performance memory solutions for artificial intelligence workloads. You will leverage expert knowledge to architect and optimize DRAM designs to enhance performance and efficiency.

The ideal candidate will bring extensive experience in DRAM design, strong mixed signal expertise, and proficiency with SPICE-based tools. Micron offers comprehensive benefits, focused on personal wellbeing and career growth. Join us to lead the future of memory technology.

Qualifications

• 10+ years of experience in delivering DRAM-based designs.
• Strong mixed signal design experience.
• Experience in programming languages and hardware description languages.

Responsibilities

• Develop novel DRAM architectures for AI workloads.
• Collaborate to identify and resolve circuit bottlenecks.
• Validate designs through simulation and analysis.

Skills

Mixed signal design expertise

DRAM circuit design

SPICE-based tools expertise

Programming (Python, C/C++)

Semiconductor device physics knowledge

Strong communication skills

Education

Masters or PhD in relevant fields

Tools

FineSim

HSPICE

Verilog

Job description

1000 Micron Technology, Inc. is looking for a Senior Member of Technical Staff in Richardson, Texas, to innovate high-performance memory solutions for artificial intelligence workloads. You will leverage expert knowledge to architect and optimize DRAM designs to enhance performance and efficiency.

The ideal candidate will bring extensive experience in DRAM design, strong mixed signal expertise, and proficiency with SPICE-based tools. Micron offers comprehensive benefits, focused on personal wellbeing and career growth. Join us to lead the future of memory technology.