Senior 3D NAND Memory Architect

Ellenco Estágios e Treinamentos; Milpitas (CA); On-site; USD 150,000 - 210,000; Full time

Benefits offered by this job

Paid vacation time

Health insurance

401(k) plan

Transit benefits

Tuition reimbursement

Job summary

Sandisk is hiring for a Memory Technology role in California. The team is building a cutting-edge 3D memory in a multi-billion dollar fab, offering a startup-like, fast-paced environment within a global company.

You will contribute to transistor- and gate-level circuit design, high-speed datapath, and silicon evaluation while collaborating with cross-functional teams to advance next-generation memory technologies.

Qualifications

• Master's degree in Electrical Engineering or equivalent with 15+ years of relevant experience.
• Knowledge in data path design (Nand, DRAM, LPDDR or HBM).
• Knowledge in decoding concept and redundancy concept.
• Knowledge in NAND page buffer design.
• Experience in RTL design and non-volatile memory design is a big advantage.
• Knowledge of high-speed I/O circuitry is a plus.

Responsibilities

• Architect and design circuits at transistor and gate level for 3D NAND memory.
• Perform block level and full chip circuit simulations to meet specs.
• RTL design, synthesis, static timing analysis and verification in Verilog.
• Conduct silicon debugging and evaluation with micro-probing.
• Collaborate with characterization engineers to characterize silicon.
• Generate detailed technical reports and presentations.

Skills

Data path design

RTL design

Verilog

Circuit simulations

Silicon debugging

Device background

Education

Master's degree in Electrical Engineering

Job description

Sandisk is hiring for a Memory Technology role in California. The team is building a cutting-edge 3D memory in a multi-billion dollar fab, offering a startup-like, fast-paced environment within a global company.

You will contribute to transistor- and gate-level circuit design, high-speed datapath, and silicon evaluation while collaborating with cross-functional teams to advance next-generation memory technologies.