RF Technology Development Engineer (SiGe/HBT)

Global Foundries; Essex Junction (VT); On-site; USD 85,000 - 146,000; Full time

Job summary

GlobalFoundries seeks a device and integration engineer for its RF Technology Development Organization in Essex Junction, VT. The role focuses on TCAD simulation, device design, and electrical characterization of SiGe HBT devices.

Collaborate with process integration for fabrication, establish test structures, and perform DC/RF measurements while analyzing data and addressing technical queries for customers.

Qualifications

• Master's or PhD in Electrical Engineering or Materials Science from an accredited program.
• Strong research background in CMOS/III-V/memory device physics and semiconductor processing.
• Excellent data analysis and communication skills; GPA 3.0+.

Responsibilities

• TCAD simulation, device design, electrical characterization of SiGe HBT devices.
• Theoretical studies or simulations to optimize device performance and benchmarking.
• Collaborate with process integration for device fabrication.
• Establish test structures and test methodologies; drive problem solving.
• DC and RF characterization including high power, s-parameter, and loadpull.
• Data analysis; interact with customers and respond to technical queries.

Skills

Data analysis

English fluency

Interpersonal skills

Technical communication

Problem solving

Education

Master's or PhD in Electrical Engineering or Materials Science

Tools

Cadence

Job description

GlobalFoundries seeks a device and integration engineer for its RF Technology Development Organization in Essex Junction, VT. The role focuses on TCAD simulation, device design, and electrical characterization of SiGe HBT devices.

Collaborate with process integration for fabrication, establish test structures, and perform DC/RF measurements while analyzing data and addressing technical queries for customers.