R&D Semiconductor Process & Device Engineer – RF/CMOS

GlobalFoundries; Essex Junction (VT); On-site; USD 85,000 - 146,000; Full time

Job summary

GlobalFoundries seeks a highly motivated candidate for its Technology Development team in Vermont (FAB9). The role embeds with process, integration, and device engineers to develop new CMOS, SiGe, and GaN flow, targeting RF applications. New hires join project teams and contribute to innovative semiconductor technologies in a fast-paced environment.

Ideal candidates hold a Ph.D. in a related field, possess knowledge of device physics, and can communicate effectively in English.

Qualifications

• Ph.D. in Electrical Engineering, Solid State Physics, Microelectronics, Chemical Engineering, Material Science, or related field from an accredited degree program.
• Fluency in English language – written & verbal.
• Basic knowledge of modern semiconductor device physics and device characterization, and of semiconductor processing.
• Physical capacity to work in a manufacturing clean room with product handling.
• Proficiency in MS Office and Statistical Analysis including CpK, Design of Experiments.

Responsibilities

• Innovate with integration and device team members to drive integration of advanced process modules.
• Interact with fab teams to support technology development and program success.
• Support technology development milestones from conception through manufacturing installation; analyze results.

Skills

English fluency

MS Office

Statistical analysis

Design of Experiments

CpK and device physics basics

Education

Ph.D. in Electrical Engineering / Microelectronics / related field

Job description

GlobalFoundries seeks a highly motivated candidate for its Technology Development team in Vermont (FAB9). The role embeds with process, integration, and device engineers to develop new CMOS, SiGe, and GaN flow, targeting RF applications. New hires join project teams and contribute to innovative semiconductor technologies in a fast-paced environment.

Ideal candidates hold a Ph.D. in a related field, possess knowledge of device physics, and can communicate effectively in English.