Principal RF Epitaxy & Integration Engineer

GLOBALFOUNDRIES U.S. 2 LLC; Essex Junction (VT); On-site; USD 85,000 - 146,000; Full time

Job summary

GlobalFoundries in Essex Junction, VT is seeking an epitaxy and integration engineer for our RF Technology Development Organization to advance semiconductor technologies with cross‑functional teams. You will develop, evaluate and qualify CVD Si/SiGe epitaxial processes, define growth conditions, and drive integration optimization using DOE and statistical analysis.

Master’s or PhD in Electrical or Materials Science is required; at least a 3.0 GPA and strong English communication skills are

Qualifications

• Education – Master’s or PhD in Electrical, Materials Science, or related field.
• GPA of 3.0 or higher and strong academic standing.
• English language proficiency (written and verbal).

Responsibilities

• Develop, evaluate and qualify CVD Si/SiGe epitaxial process.
• Define epitaxial growth conditions and controls methodology.
• Drive integration optimization using DOE, statistical analysis, and yield learning.
• Collaborate with unit process module engineers and failure analysis teams.
• Own and drive technical process problem solving.

Skills

epitaxy growth

DOE methodologies

statistical analysis

yield optimization

RF fundamentals

leadership

project management

communication

Education

Master's or PhD in Electrical or Materials Science

Job description

GlobalFoundries in Essex Junction, VT is seeking an epitaxy and integration engineer for our RF Technology Development Organization to advance semiconductor technologies with cross‑functional teams. You will develop, evaluate and qualify CVD Si/SiGe epitaxial processes, define growth conditions, and drive integration optimization using DOE and statistical analysis.

Master’s or PhD in Electrical or Materials Science is required; at least a 3.0 GPA and strong English communication skills are