Principal Design Engineer: High-Speed NAND Datapath Architect

Micron Technology, Inc; San Jose (CA); On-site; USD 176,000 - 298,000; Full time

Benefits offered by this job

Medical, dental, and vision plans

Paid time-off program

Equity and bonus opportunities

Job summary

Micron Technology, Inc in San Jose, California, is seeking a Principal Design Engineer to drive innovation in memory technology. You will lead the design of groundbreaking circuits for next-generation NAND flash memory, ensuring project success while mentoring engineering talent.

The ideal candidate will have extensive experience in IC design and high-speed IO circuit performance. Competitive salary and benefits provided.

Qualifications

• 8+ years of relevant IC design experience.
• 10+ years of knowledge in high-speed IO circuits.
• Proven track record in physical design flows.

Responsibilities

• Lead development of datapath circuits for NAND flash memory.
• Manage and verify major IO/datapath blocks.
• Collaborate with teams to negotiate specifications.

Skills

High-speed IO circuit performance

Power/area optimization

Project management skills

Education

BS or MS in Electrical Engineering

Job description

Micron Technology, Inc in San Jose, California, is seeking a Principal Design Engineer to drive innovation in memory technology. You will lead the design of groundbreaking circuits for next-generation NAND flash memory, ensuring project success while mentoring engineering talent.

The ideal candidate will have extensive experience in IC design and high-speed IO circuit performance. Competitive salary and benefits provided.