MOSFET R&D Engineer: Power Device Innovation

Vishay Intertechnology, Inc.

Phoenix (AZ)

Hybrid

USD 90,000 - 130,000

Full time

14 days+
Application generator

Get a reply from this employer — a resume and cover letter tailored to exactly what they’re hiring for.

Get past ATS filters

Job summary

Vishay Intertechnology, Inc. seeks an R&D Engineer in the Greater Phoenix Area to lead MOSFET device development and technology strategies. The role emphasizes device physics, experimental design, and cross-functional collaboration across engineering teams.

Ideal candidates possess a Master’s or PhD in a related field and 3+ years of semiconductor experience, with strong bench testing and data analysis skills. The position offers a hybrid work model in the Phoenix area.

Qualifications

  • Master's degree or PhD in a related technical field; strong fundamentals in device physics.
  • 3+ years of semiconductor industry experience in MOSFET or related device development.
  • Experience with bench tests, electrical characterization, and data analysis.

Responsibilities

  • Develop and optimize power MOSFET device structures and technologies to meet performance and reliability targets.
  • Design new products to meet cost, performance, reliability, and manufacturability requirements.
  • Collaborate with Process Engineering, Product Engineering, Manufacturing, and Quality teams to advance technology roadmaps.

Skills

Semiconductor device physics
Experimentation & DOE
Data analysis
Cross-functional collaboration
Python/MATLAB

Education

Master's degree in Electrical Engineering or related
Ph.D. preferred in Electrical Engineering, Semiconductor Engineering, Materials Science or Physics

Tools

TCAD
Device characterization equipment
DOE software

Job description

Vishay Intertechnology, Inc. seeks an R&D Engineer in the Greater Phoenix Area to lead MOSFET device development and technology strategies. The role emphasizes device physics, experimental design, and cross-functional collaboration across engineering teams.

Ideal candidates possess a Master’s or PhD in a related field and 3+ years of semiconductor experience, with strong bench testing and data analysis skills. The position offers a hybrid work model in the Phoenix area.

Get your free, confidential resume review.
or drag and drop your file here.
Similar jobs

Similar jobs worth comparing

Staff MOSFET Product Engineer — Lead Global NPI & Yield
Staff MOSFET Product Engineer — Lead Global NPI & Yield

Vishay Intertechnology, Inc. • San Jose (CA)

On-site
USD 100,000 - 130,000
Health care coverage
Financial support programs
Career development opportunities
Senior Power MOSFET Design Engineer
Senior Power MOSFET Design Engineer

Renesas Electronics • Tempe (AZ)

On-site
USD 120,000 - 190,000
Staff Product Engineer
Staff Product Engineer

Vishay Intertechnology, Inc. • San Jose (CA)

On-site
USD 100,000 - 130,000
Health care coverage
Financial support programs
Career development opportunities
Power Semiconductor Engineering Lead
Power Semiconductor Engineering Lead

Nexus Semiconductor Recruitment • Arizona

On-site
USD 120,000 - 170,000
Lead Power MOSFET Design Engineer
Lead Power MOSFET Design Engineer

Renesas Electronics • Austin (TX)

On-site
USD 150,000 - 210,000
Principal Power MOSFET Design Engineer
Principal Power MOSFET Design Engineer

Renesas Electronics • San Jose (CA)

On-site
USD 180,000 - 240,000
Manager of Device Engineering
Manager of Device Engineering

Nexus Semiconductor Recruitment • Arizona

On-site
USD 120,000 - 170,000
R&D Engineer
R&D Engineer

Vishay Intertechnology, Inc. • Phoenix (AZ)

Hybrid
USD 90,000 - 130,000
Senior Manager, Market Development
Senior Manager, Market Development

Vishay Intertechnology, Inc. • San Jose (CA)

On-site
USD 150,000 - 200,000
Medical insurance
Vision insurance
Paid maternity leave
+2
Principal Device Design Engineer
Principal Device Design Engineer

Renesas Electronics • Tempe (AZ)

On-site
USD 120,000 - 190,000