Lead Power MOSFET Design Engineer

Renesas Electronics

Austin (TX)

On-site

USD 150,000 - 210,000

Full time

14 days+

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Job summary

Renesas Electronics Americas is seeking a Principal Device Design Engineer to develop cutting-edge switching power MOSFETs for 12V to 80V applications, spanning architecture through product characterization. You will use TCAD simulation and test-method development while collaborating with process integration and IC design teams to deliver manufacturable solutions.

The role demands strong expertise in power semiconductor devices, device physics, reliability, and manufacturing, with 7+ years of

Qualifications

Expertise in power semiconductor devices, physics, reliability and manufacturing.
Experience with TCAD modeling and device design for MOSFETs.
Understanding of packaging, PCB parasitics, and drive circuitry.

Responsibilities

Develop high-performance switching power MOSFETs for 12V–80V applications.
Conceive novel device structures and optimize for performance and ruggedness.
Use TCAD simulations to identify critical design parameters and variations.
Collaborate with process integration engineers on manufacturable designs.
Coordinate with IC design teams for MOSFET drivers.
Interface with fab process engineers to develop new process recipes and rules.
Plan and execute design of experiments to shorten development cycles.
Analyze measured data to optimize device performance.
Provide engineering support for existing devices to maintain yield and performance.