GaN Plasma Etch Process Engineer (Development)

Socket.dev; Sherman (TX); On-site; USD 140,000 - 190,000; Full time

Job summary

Texas Instruments is seeking an Advanced GaN Process Development Engineer to join the Plasma Etch Process Development team. You will develop, optimize, and transfer advanced plasma etch processes supporting next-generation GaN semiconductor technologies, working with integration, equipment, metrology, and manufacturing teams to drive innovation and enable high-volume production.

Ideal candidates have deep expertise in plasma etch fundamentals, semiconductor process development, and data

Qualifications

• 5+ years semiconductor plasma/dry etch process development experience.
• Bachelor's degree in an engineering, science, or related STEM discipline.
• Experience with DOE methodologies and statistical analysis.
• Familiarity with metrology techniques including SEM, CD-SEM, ellipsometry and defect inspection tools.

Responsibilities

• Develop and optimize plasma etch processes for advanced semiconductor devices.
• Design and execute experiments (DOE) to improve critical process metrics, including: Etch rate, Selectivity, Critical dimension (CD) control, Profile control, Defectivity, Uniformity.
• Characterize process performance and establish process windows for manufacturing robustness.
• Evaluate new process chemistries, hardware configurations, and chamber technologies.
• Support development and qualification of next-generation etch technologies.
• Collaborate with device integration teams to meet product and technology requirements.
• Drive process readiness for technology transfers from development into manufacturing.
• Establish process specifications, control plans, and release documentation.
• Partner with equipment engineering teams to improve tool capability, productivity, and reliability.
• Lead chamber matching, equipment qualification, and process performance improvement activities.
• Support installation and startup of new etch platforms.
• Analyze complex process datasets using statistical methods and data analytics tools.
• Identify root causes of process excursions and implement corrective actions.
• Lead yield improvement and defect reduction initiatives.
• Utilize SPC methodologies to monitor and improve process stability.
• Work closely with Process Integration, Manufacturing, Yield Engineering, Metrology, Equipment Engineering, Quality and Reliability teams.
• Present technical findings and recommendations to management and key stakeholders.
• Mentor junior engineers and technicians as needed.

Skills

DOE methodologies

Statistical data analysis

Cross-functional problem solving

Python

Team collaboration

Education

Bachelor's degree in engineering/science

Tools

SEM

CD-SEM

Ellipsometry

Defect inspection tools

Job description

Texas Instruments is seeking an Advanced GaN Process Development Engineer to join the Plasma Etch Process Development team. You will develop, optimize, and transfer advanced plasma etch processes supporting next-generation GaN semiconductor technologies, working with integration, equipment, metrology, and manufacturing teams to drive innovation and enable high-volume production.

Ideal candidates have deep expertise in plasma etch fundamentals, semiconductor process development, and data