GaN Device Reliability & Characterization Engineer

XMax Inc.; San Jose (CA); In loco; USD 77.000 - 100.000; Tempo pieno

Descrizione del lavoro

XMax Inc. in San Jose, CA, is hiring a GaN Device Characterization and Reliability Engineer to advance our 1200V-class vertical GaN trench MOSFET R&D program.

This full-time on-site role at 1798 Technology Dr, Suite 236, requires developing HV characterization methods and reliability analysis for prototype devices. Ideal candidates have strong foundations in semiconductor physics and electrical measurement, with advanced degrees preferred.

Competenze

• Knowledge of semiconductor device physics and electrical measurement.
• Familiarity with high-voltage instrumentation, test automation, statistical analysis or semiconductor reliability is preferred.
• Relevant study, research or practical experience in electrical engineering, materials science, physics or a related field.
• Master’s or PhD preferred. No minimum years of work experience required.

Mansioni

• Develop electrical characterization methods for prototype vertical GaN devices, including static and dynamic behavior.
• Switching and temperature dependence testing; build and automate high-voltage test setups.
• Plan accelerated stress experiments and evaluate degradation and failure mechanisms.
• Analyze measurement uncertainty, device variability and reliability data.
• Collaborate with design and process engineers on root-cause analysis and improvements; maintain traceable test records.

Conoscenze

Semiconductor device physics

Electrical measurement

Data analysis

Test automation

High-voltage instrumentation

Formazione

Master’s degree

PhD

Descrizione del lavoro

XMax Inc. in San Jose, CA, is hiring a GaN Device Characterization and Reliability Engineer to advance our 1200V-class vertical GaN trench MOSFET R&D program.

This full-time on-site role at 1798 Technology Dr, Suite 236, requires developing HV characterization methods and reliability analysis for prototype devices. Ideal candidates have strong foundations in semiconductor physics and electrical measurement, with advanced degrees preferred.