GaN Power Device Design Engineer

XMax Inc.; San Jose (CA); On-site; USD 65,000 - 78,000; Full time

Job summary

XMax Inc. is seeking a GaN Power Device Design Engineer to contribute to advanced vertical GaN transistor research and development in San Jose, CA.

The role is on-site and focused on design, simulation, and process-compatibility work within an exciting R&D program. Responsibilities include modeling and validating GaN devices, evaluating electrical characteristics, and collaborating with process engineers to optimize layouts and reliability.

Qualifications

• Knowledge of semiconductor device physics and power-device engineering.
• Data analysis and technical communication skills.
• TCAD, layout or characterization experience preferred.
• Relevant study, research or practical experience in electrical engineering, materials science, physics or related fields.
• Master's or PhD preferred.
• No minimum years of work experience.
• Chinese proficiency not required.

Responsibilities

• Design and simulate vertical GaN structures, trench gates and edge termination.
• Use semiconductor physics and TCAD to evaluate breakdown voltage, on-resistance and gate behavior.
• Develop layouts and experiment splits with process engineers.
• Compare models with prototype measurements and improve designs using characterization and reliability data.
• Document results and participate in technical reviews.

Skills

Semiconductor physics

Data analysis

TCAD

Communication

Education

Master's or PhD preferred

Tools

TCAD software

Layout experience

Characterization experience

Job description

HexaGaN is developing 1200V-class vertical GaN trench MOSFET technology for potential applications in data centers, electric vehicles, and energy storage. This is an R&D program, not a claim of mass production. XMax Inc. is hiring a GaN Power Device Design Engineer.

POSITION

• One full-time opening, daily on-site at 1798 Technology Dr, Suite 236, San Jose, CA.

RESPONSIBILITIES

• Design and simulate vertical GaN structures, trench gates and edge termination.
• Use semiconductor physics and TCAD to evaluate breakdown voltage, on-resistance and gate behavior.
• Develop layouts and experiment splits with process engineers.
• Compare models with prototype measurements and improve designs using characterization and reliability data.
• Document results and participate in technical reviews.

QUALIFICATIONS

• Knowledge of semiconductor device physics and power-device engineering.
• Data analysis and technical communication skills.
• TCAD, layout or characterization experience preferred.
• Relevant study, research or practical experience in electrical engineering, materials science, physics or related fields.
• Master's or PhD preferred.
• No minimum years of work experience.
• Chinese proficiency not required.

COMPENSATION

Initial gross base pay US$6,400 per month. After three months, compensation may be adjusted to US$100,000 per year based on evaluation; adjustment is not automatic or guaranteed. Applicable overtime paid as required by law.

EMPLOYER

Employer: XMax Inc.