GaN Device Characterization and Reliability Engineer

XMax Inc.; San Jose (CA); In loco; USD 77.000 - 100.000; Tempo pieno

Descrizione del lavoro

XMax Inc. in San Jose, CA, is hiring a GaN Device Characterization and Reliability Engineer to advance our 1200V-class vertical GaN trench MOSFET R&D program.

This full-time on-site role at 1798 Technology Dr, Suite 236, requires developing HV characterization methods and reliability analysis for prototype devices. Ideal candidates have strong foundations in semiconductor physics and electrical measurement, with advanced degrees preferred.

Competenze

• Knowledge of semiconductor device physics and electrical measurement.
• Familiarity with high-voltage instrumentation, test automation, statistical analysis or semiconductor reliability is preferred.
• Relevant study, research or practical experience in electrical engineering, materials science, physics or a related field.
• Master’s or PhD preferred. No minimum years of work experience required.

Mansioni

• Develop electrical characterization methods for prototype vertical GaN devices, including static and dynamic behavior.
• Switching and temperature dependence testing; build and automate high-voltage test setups.
• Plan accelerated stress experiments and evaluate degradation and failure mechanisms.
• Analyze measurement uncertainty, device variability and reliability data.
• Collaborate with design and process engineers on root-cause analysis and improvements; maintain traceable test records.

Conoscenze

Semiconductor device physics

Electrical measurement

Data analysis

Test automation

High-voltage instrumentation

Formazione

Master’s degree

PhD

Descrizione del lavoro

HexaGaN is developing 1200V-class vertical GaN trench MOSFET technology for potential applications in data centers, electric vehicles, and energy storage. This is a research and development program, not a claim of mass production.

XMax Inc. is hiring a GaN Device Characterization and Reliability Engineer to advance this semiconductor R&D work.

POSITION:

One full-time opening; daily on-site work at 1798 Technology Dr, Suite 236, San Jose, CA.

RESPONSIBILITIES:

Develop electrical characterization methods for prototype vertical GaN devices, including static and dynamic behavior, switching and temperature dependence; build and automate safe high-voltage test setups; plan accelerated stress experiments and evaluate degradation and failure mechanisms; analyze measurement uncertainty, device variability and reliability data; collaborate with design and process engineers on root-cause analysis and improvements; maintain traceable test records and technical reports.

QUALIFICATIONS:

Knowledge of semiconductor device physics and electrical measurement; careful laboratory practice, data analysis and technical communication. Familiarity with high-voltage instrumentation, test automation, statistical analysis or semiconductor reliability is preferred. Relevant study, research or practical experience in electrical engineering, materials science, physics or a related field. Master’s or PhD preferred. No minimum years of work experience required. Chinese proficiency is not required.

COMPENSATION:

Initial gross base pay US$6,400 per month. After three months, compensation may be adjusted to US$100,000 per year based on evaluation; the adjustment is not automatic or guaranteed. Applicable overtime will be paid as required by law.

Employer: XMax Inc.