R&D GaN Device Engineer

Analog Group Inc.; Boston, Los Angeles, San Jose (MA, CA, CA); On-site; USD 100,000 - 130,000; Full time

Job summary

A leading technology firm is seeking an experienced engineer to lead the development of GaN power switches in San Jose, CA. Candidates should have a strong background in GaN technology, be proactive team members, and possess MS or PhD qualifications. You will work on cutting-edge projects and have the opportunity to coach junior staff while collaborating with an international team.

Qualifications

• 5-10 years of experience in leading GaN technology development.
• Proficient in electrical testing of GaN power switches.
• Ability to work & communicate effectively with global team members.

Responsibilities

• Lead the development of Radiation Hardened GaN power switches.
• Perform device and process simulations, and coach junior staff.
• Define device design and fabrication specifics.

Skills

GaN power switching

HEMT device physics

Synopsys TCAD

Cadence software

Electrical testing

Education

MS or PhD in Electrical Engineering

Materials Science with focus on GaN

Tools

Synopsys TCAD

Cadence suite

Job description

Multiple location options: Chandler, AZ; Boston, MA; Los Angeles, CA or San Jose, CA

Do you have hands on experience in the design and development of GaN power switching? Do you also have a strong working knowledge in HEMT device physics? Join our growing team and put these skills to use to help define our roadmap and future technology!

Our leading-edge power devices make chargers, adapters, power tools and lighting systems smarter, smaller, lighter and more energy-efficient. Our trusted sensors increase the context sensitivity of ”things” and systems such as HMI, and our RF chips power fast and reliable data communication.

We drive leading-edge power management, sensing and data transfer capabilities.

• Lead the development of Radiation Hardened and Radiation Tolerant GaN power switches
• Participate in road map a and future technology brainstorming discussions
• Define device design and fabrication platform specifics to meet the application targets in a manufacturable and cost effective manner
• Perform device and process simulations, photo mask design and testing
• Support the platform/product design review process
• Coach junior staff in the team in device design and fabrication process
• Utilize your knowledge of prior art, by writing up a description of the new invention and working with the IP team to file a disclosure

Experience:

• MS or PhD in Electrical Engineering preferred or in Materials Science with focus on GaN
• 5-10 years of experience in leading GaN technology development
• Strong knowledge in HEMT device physics and fabrication of GaN power switches
• Proficiency in Synopsys TCAD and Cadence suite of software along with electrical testing of GaN power switches, DOE definition and analysis using JMP. Experience in Radiation Hardened preferred
• Must have ability to work & communicate effectively with team members located across the globe
• Must be US permanent Resident or Citizen.

Personal Characteristics:

You have hands on experience in design and development of GaN power switches and in the challenges accompanying that. You use quantitative analysis skills to quickly understand complex situations and collaborate as a team to come up with creative solutions. You are a strategic thinker who owns responsibility and is able to work with minimal direction. Furthermore, you work with ease in Synopsys TCAD software suite and in Cadence environment for layout design.