DRAM Process Integration Internship - Next-Gen Memory

Micron Technology, Inc; Boise (ID); On-site; USD 28,000 - 41,000; Full time

Benefits offered by this job

Medical/dental/vision plans

Paid time off

Paid holidays

Job summary

Micron Technology, Inc. in Boise, Idaho invites a PhD candidate to join the 3D DRAM Process Integration team as an intern.

You will support the development of next-generation DRAM technologies focusing on device performance, reliability, and manufacturability, working with multi-functional teams in a state-of-the-art 300mm R&D facility. The ideal candidate has a strong background in semiconductor device fabrication, materials science, and data-driven problem solving, with interest in

Qualifications

• Pursuing a PhD in Materials Science, Physics, Chemical Engineering, or related field.
• Experience with semiconductor device fabrication, electrical characterization, and device physics.
• Strong data-driven problem solving and ability to communicate complex findings clearly.

Responsibilities

• Develop next-generation DRAM technologies with focus on device performance and reliability.
• Design, run, and analyze experiments in the R&D fabrication environment.
• Collaborate with process development, product engineering, design, and reliability teams.
• Analyze inline, electrical, and probe data to identify results and optimization opportunities.
• Apply AI/AI-assisted tools to support analysis and productivity.

Skills

Semiconductor fabrication

Electrical characterization

Material characterization

Device physics

Data analysis

Communication skills

AI tool usage

Education

PhD in Materials Science, Physics, Chemical Engineering, or related field

Tools

Python

R

AI/Generative AI tools

Statistical data analysis

Job description

Micron Technology, Inc. in Boise, Idaho invites a PhD candidate to join the 3D DRAM Process Integration team as an intern.

You will support the development of next-generation DRAM technologies focusing on device performance, reliability, and manufacturability, working with multi-functional teams in a state-of-the-art 300mm R&D facility. The ideal candidate has a strong background in semiconductor device fabrication, materials science, and data-driven problem solving, with interest in