DRAM Device & Cell Tech Engineer — Next-Gen Memory

Micron Technology, Inc; Boise (ID); On-site; USD 120,000 - 180,000; Full time

Benefits offered by this job

Medical, dental and vision plans

Paid time off

Paid holidays

Benefits guide reference

Job summary

Micron Technology, Inc. seeks a DRAM Device & Cell Technology Engineer to advance next-generation DRAM cell architectures and access devices. You’ll work with engineers to solve complex challenges and support memory technology roadmaps.

You will apply semiconductor device knowledge, data analysis, and experimental methods, collaborating across teams to optimize technology solutions and deliver impact.

Qualifications

• MS or PhD in Electrical Engineering, Materials Science, Applied Physics, or related field by start date.
• coursework or project experience in semiconductor devices, microelectronics or device physics.
• Fundamental understanding of MOSFETs and electrical characterization.

Responsibilities

• Support development and evaluation of DRAM cell and access device technologies to improve density and reliability.
• Design, complete, and analyze silicon experiments and electrical characterization studies.
• Collaborate with device, process integration, modeling, design, and product teams to optimize solutions.
• Perform data analysis and communicate findings via reports and presentations.
• Utilize AI-assisted tools to enhance productivity and identify trends in data.

Skills

Python

MATLAB

Data analysis

Education

MS/PhD in EE or related

Tools

TCAD Tools (Sentaurus/Silvaco)

Job description

Micron Technology, Inc. seeks a DRAM Device & Cell Technology Engineer to advance next-generation DRAM cell architectures and access devices. You’ll work with engineers to solve complex challenges and support memory technology roadmaps.

You will apply semiconductor device knowledge, data analysis, and experimental methods, collaborating across teams to optimize technology solutions and deliver impact.