Assistant Research Scientist (PREP0004209)

Johns Hopkins University; Gaithersburg (MD); On-site; USD 35,000 - 40,000; Full time

Job summary

Johns Hopkins University is looking for a PREP Research Associate to support scientific research related to piezoelectric materials. The role involves film growth, characterization, and measurement of properties in collaboration with NIST and other partners. Candidates should have a B.S. in materials science or a related field, with an emphasis on semiconductor devices. The salary ranges from $35,000 to $40,000 a year. Preferred candidates will have experience in RF magnetron sputtering and advanced data analysis techniques.

Qualifications

• Basic experience with laboratory equipment is necessary.
• Familiarity with materials characterization techniques is essential.
• Laboratory safety training is required.

Responsibilities

• Perform film growth by reactive magnetron sputtering.
• Collaborate with partners and publish findings.
• Mentor graduate and undergraduate students.
• Participate in funding proposals writing.

Skills

Laboratory equipment experience

Materials characterization techniques

Oral and written communication in English

Education

B.S. in materials science and engineering or related field

Tools

X-ray diffraction

Electron microscopy

Scanning probe microscopy

Job description

General Description

Salary: $35,000-$40,000 a year

PREP Research Associate – CHIPS Funded Project

This position is part of the National Institute of Standards and Technology (NIST) Professional Research Experience Program (PREP). It supports scientific research through collaboration with academic, industry, and national laboratory partners. The candidate will perform technical work supporting the project's research objectives, including film growth, characterization, and measurement of electrical and electromechanical properties.

Research Title: PREP0004209 - 672.01 (CHIPS) – Piezoelectric Materials Growth Graduate Researcher

Key Responsibilities

• Primary responsibilities include film growth by reactive magnetron sputtering, chemical and structural characterization, and measurement, interpretation, and analysis of electrical and electromechanical properties.
• Collaborate closely with partners at NIST, the National Laboratory of the Rockies, industry partners, and colleagues at other universities.
• Publish findings in peer‑reviewed journals, present at project meetings and scientific conferences, and mentor graduate and undergraduate students.
• Participate in writing funding proposals.
• Learn and apply measurement techniques for piezoelectric properties, ferroelectric hysteresis, and semiconductor devices.
• Thin film growth and monitoring/optimization via reactive magnetron sputtering.
• Measurement, interpretation, analysis, and reporting of structural, chemical, electrical, and electromechanical characteristics of thin films.
• Interact with interdisciplinary partners on publication, reporting, and device prototyping.
• Write up research for project reports and archival journals and present results at national and international conferences.

Qualifications

Education and Experience:

• B.S. in materials science and engineering or related field with emphasis on semiconductor devices, functional ceramics, or related topics.

Minimum Knowledge, Skills, and Abilities:

• Basic experience with laboratory equipment.
• Basic experience with materials characterization such as X‑ray diffraction, electron microscopy, scanning probe microscopy, etc.
• Laboratory safety training.
• Strong oral and written communication in English.

Preferred Knowledge, Skills, and Abilities:

• Experience with film growth via RF magnetron sputtering.
• Proficiency in textured/epitaxial film analysis using advanced diffraction techniques such as rocking curve, pole figure, and/or reciprocal space mapping.
• Measurement and analysis of piezoelectric and/or ferroelectric properties.
• Characterization of RF resonator devices.
• Measurement and interpretation of electrical properties using a probe station.

EEO Statement

The Johns Hopkins University is committed to equal opportunity for its faculty, staff, and students. To that end, the university does not discriminate on the basis of sex, gender, marital status, pregnancy, race, color, ethnicity, national origin, age, disability, religion, sexual orientation, gender identity or expression, veteran status, or other legally protected characteristic. The university is committed to providing qualified individuals access to all academic and employment programs, benefits, and activities on the basis of demonstrated ability, performance, and merit without regard to personal factors that are irrelevant to the program involved.