Research Fellow (Carbon Nanotube CMOS Process Development and Device Integration)

NATIONAL UNIVERSITY OF SINGAPORE

Singapore

On-site

SGD 110,000 - 160,000

Full time

14 days+
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Job summary

The National University of Singapore (NUS) invites applications for a Research Fellow to lead CNFET process development and device fabrication on wafer-scale carbon nanotube CMOS. The role involves developing BEOL-compatible processes, scaling via advanced lithography, and transferring a documented process to an industry partner for verification on a 200 mm line.

You will supervise graduate students, publish in leading venues, and contribute to invention disclosures and research proposals, with

Qualifications

  • PhD in a relevant engineering or science field (awarded or near completion).
  • Hands-on cleanroom experience across multiple deposition and etch processes.
  • Proven ability to take a device from mask design to fabrication with electrical data.
  • Experience in electrical characterization of nanoscale transistors and data analysis.
  • Strong publication record and ability to work independently and mentor others.

Responsibilities

  • Lead process development and device fabrication for wafer-scale CNFET work.
  • Develop ALD high‑k gate stacks, S/D metallisation, channel cleaning and passivation.
  • Scale device geometry using advanced lithography for aggressive pitch.
  • Qualify CNFET channel materials via SEM, AFM, Raman and optical mapping.
  • Characterise devices electrically and statistically; assess reliability.
  • Draft and transfer process-of-record and support lab-to-fab transfer with partners.
  • Collaborate on CNFET module integration and IC fabrication with circuit team.
  • Publish results and supervise students in the cleanroom.

Skills

Cleanroom operation
Electron-beam lithography
Device fabrication
Electrical device characterization
Scientific publication track

Education

PhD in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering or related field

Tools

ALD high‑k gate stacks
Reactive ion etching
Physical vapour deposition
Electron-beam lithography
UV/DUV lithography
Wafer-scale integration

Job description

Job Description

The Department of Electrical and Computer Engineering (ECE), College of Design and Engineering, is seeking a Research Fellow to lead the process development and device fabrication track of a research programme on wafer‑scale carbon nanotube CMOS. The work runs on two tracks: process modules are developed and optimised on coupon‑scale samples at NUS, then transferred as a documented process‑of‑record to an industry partner for verification on a 200 mm line.

Key responsibilities:

  • Develop and optimise the core CNFET process modules — ALD high‑k gate stacks, source/drain contact metallisation, channel cleaning and passivation, and threshold‑voltage control — within a BEOL‑compatible (≤ 400 °C) thermal budget.
  • Build a silicon‑fab‑compatible contact integration scheme using only unit processes a production line already runs, and scale the device geometry to aggressive contacted gate pitch by electron‑beam or DUV lithography.
  • Qualify incoming carbon nanotube array film as a device‑grade channel material (density, alignment, uniformity, purity, residues) by SEM, AFM, Raman and optical mapping, and define acceptance criteria.
  • Characterise devices electrically and statistically — transfer and output characteristics, contact resistance, subthreshold swing, hysteresis, threshold distributions and basic reliability screening.
  • Author the process‑of‑record (flow sheet, recipes, metrology plan, in‑line control limits) and support its lab‑to‑fab transfer to the partner line, including joint failure analysis and corrective process splits.
  • Develop an CNFET module for complementary operation, and fabricate CNFET integrated circuits in collaboration with the circuit design team.
  • Publish in leading venues, supervise graduate students in the cleanroom, and contribute to invention disclosures and research proposals.
Qualifications

Essential:

  • PhD in Electrical Engineering, Materials Science, Applied Physics, Chemical Engineering or a closely related field (awarded, or thesis submitted, at the time of application).
  • Substantial hands‑on cleanroom experience covering a credible fraction of: atomic layer deposition, electron‑beam and/or stepper lithography, reactive ion etching, physical vapour deposition and evaporation, and wet processing.
  • Demonstrated ability to take a device from mask design through fabrication to working electrical data — the whole flow, not a single module.
  • Electrical characterisation of nanoscale transistors (semiconductor parameter analyser, probe station), with the statistical discipline to separate a real process effect from a lucky device.
  • A publication record commensurate with career stage, strong written and spoken English, and the ability to work independently and to guide junior researchers.

Desirable:

  • Device fabrication on nanomaterials — carbon nanotubes, 2D materials or nanowires.
  • Contact engineering and contact‑resistance reduction on low‑dimensional channels; work‑function engineering for complementary operation.
  • Low‑temperature / BEOL-compatible integration or monolithic 3D process experience.
  • Exposure to a 200 mm or 300 mm production environment, or prior collaboration with a foundry, including what it takes to make a recipe transferable.
  • Design of experiments, statistical process control, and in‑line metrology.
  • Cleanroom tool ownership and safety leadership.
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