PMTS - RRAM Technology and Architecture

GLOBALFOUNDRIES SINGAPORE PTE. LTD.; Singapore; On-site; SGD 210,000 - 270,000; Full time

Job summary

GLOBALFOUNDRIES SINGAPORE PTE. LTD. is seeking a Senior Member of Technical Staff to serve as the technical authority for advanced RRAM technology.

You will lead end-to-end across device physics, stack engineering, and macro architecture, and translate research concepts into manufacturable memory solutions for embedded and standalone applications. You will partner with circuit and SoC teams, define roadmaps, mentor engineers, and represent RRAM in executive reviews and customer engagements.

Qualifications

• PhD or MS in EE, Materials, or Physics with 15+ years in RRAM or emerging NVM.
• Expert in RRAM device physics, stack engineering, bitcell/macro design, and reliability.
• Proven track record delivering RRAM to silicon platforms or products.
• Strong leadership and cross-functional communication.

Responsibilities

• Define and own RRAM bitcell and macro architecture, including scaling and topology.
• Set technology direction for RRAM stack, materials, and variability reduction.
• Lead test plans and reliability characterization for product readiness.
• Act as primary technical decision-maker for RRAM programs and transfers.
• Mentor engineers and establish best practices for scalable RRAM development.

Skills

Leadership

Cross-functional influence

Communication

System-level thinking

Education

PhD or MS in EE/Materials/Physics

Job description

Introduction: We are seeking a Senior Member of Technical Staff to serve as the technical authority for advanced RRAM (Resistive RAM) technology development. This role provides end‑to‑end leadership across RRAM device physics, stack engineering, bitcell and macro architecture, and test methodology optimization. The SMTS will define the long‑term technical roadmap for RRAM platforms and ensure successful translation from research concepts to manufacturable, high‑quality memory solutions for embedded and standalone applications. This position requires deep hands‑on expertise combined with system‑level thinking, strong technical judgment, and the ability to influence cross‑functional teams and senior stakeholders.

Key Responsibilities

RRAM Architecture and Design Leadership

Define and own RRAM bitcell and macro architecture, including scaling strategies, array topology, sensing schemes, redundancy, and robustness margins.

Lead architecture trade‑offs balancing performance, power, area, variability, endurance, and retention for product‑level requirements.

Partner with circuit and SoC (design) teams to ensure seamless macro integration into customer designs.

RRAM Stack and Device Technology

Set technical direction for RRAM stack layer optimization, including material selection, interface control, thickness scaling, and variability reduction.

Drive deep understanding of RRAM switching physics, forming mechanisms, defect engineering, and reliability failure modes.

Work closely with process integration teams to ensure compatibility with advanced BEOL/FEOL flows and cost‑effective manufacturing.

Test, Characterization, and Reliability

Own definition and optimization of electrical test conditions, including forming, set/reset algorithms, read methodologies, and stress conditions.

Define the associated RRAM ET parameters target and specification.

Lead comprehensive DC/AC characterization, array‑level analysis, and qualification strategies to meet product and customer reliability requirements.

Drive silicon learning, root‑cause analysis, and yield/reliability improvement based on statistical data and failure analysis.

Program and Technical Leadership

Act as the primary technical decision‑maker for RRAM programs, resolving complex cross‑disciplinary trade‑offs.

Guide multiple project teams from early concept through silicon validation, product qualification, and technology transfer.

Represent RRAM technology in executive reviews, customer engagements, and technical forums.

Talent and Knowledge Development

Mentor and junior engineers, building long‑term RRAM technical depth within the organization.

Establish best practices, design guidelines, and institutional knowledge for scalable RRAM development.

Required Qualifications

• PhD or MS in Electrical Engineering, Materials Science, Physics, or related field with 15+ years of RRAM or emerging NVM development experience.
• Recognized expert in RRAM device physics, stack engineering, bitcell/macro design, and reliability characterization.
• Proven track record of driving RRAM technologies into silicon platforms or products.
• Strong leadership, communication, and cross‑functional influence skills.