Senior Member of Technical Staff – RRAM Technology and Architecture

GLOBALFOUNDRIES SINGAPORE PTE. LTD.; Singapore; On-site; SGD 180,000 - 300,000; Full time

Job summary

GlobalFoundries in Singapore is seeking a Senior Member of Technical Staff to lead RRAM technology development, including device physics, stack engineering, and macro design for manufacturable memory solutions. You will define long term technical roadmaps, partner with circuit and SoC teams, drive reliability, and mentor engineers while presenting progress to executives.

This role requires deep hands-on expertise, strong judgment, and the ability to influence cross-functional teams across

Qualifications

• PhD or MS in Electrical Engineering, Materials Science, Physics with 12+ years of RRAM or emerging NVM experience.
• Recognized expert in RRAM device physics, stack engineering, bitcell/macro design, and reliability characterization.
• Proven track record of driving RRAM technologies into silicon platforms or products.
• Strong leadership, communication, and cross-functional influence skills.

Responsibilities

• Define and own RRAM bitcell and macro architecture, including scaling strategies, array topology, sensing schemes, redundancy, and robustness margins.
• Lead architecture trade-offs balancing performance, power, area, variability, endurance, and retention for product-level requirements.
• Partner with circuit and SoC (design) teams to ensure seamless macro integration into customer designs.
• Set technical direction for RRAM stack layer optimization, including material selection, interface control, thickness scaling, and variability reduction.
• Drive deep understanding of RRAM switching physics, forming mechanisms, defect engineering, and reliability failure modes.
• Work closely with process integration teams to ensure compatibility with advanced BEOL/FEOL flows and cost-effective manufacturing.
• Own definition and optimization of electrical test conditions, including forming, set/reset algorithms, read methodologies, and stress conditions.
• Define the associated RRAM ET parameters target and specification.
• Lead comprehensive DC/AC characterization, array-level analysis, and qualification strategies to meet product and customer reliability requirements.
• Drive silicon learning, root‑cause analysis, and yield/reliability improvement based on statistical data and failure analysis.
• Act as the primary technical decision-maker for RRAM programs, resolving complex cross‑disciplinary trade-offs.
• Guide multiple project teams from early concept through silicon validation, product qualification, and technology transfer.
• Represent RRAM technology in executive reviews, customer engagements, and technical forums.
• Mentor and junior engineers, building long-term RRAM technical depth within the organization.
• Establish best practices, design guidelines, and institutional knowledge for scalable RRAM development.

Skills

Leadership

Communication

Cross-functional influence

Education

PhD or MS in Electrical Engineering, Materials Science, Physics

Job description

About GlobalFoundries GlobalFoundries is a leading full-service semiconductor foundry providing a unique combination of design, development, and fabrication services to some of the world’s most inspired technology companies. With a global manufacturing footprint spanning three continents, GlobalFoundries makes possible the technologies and systems that transform industries and give customers the power to shape their markets. For more information, visit www.gf.com.

Introduction: We are seeking a Senior Member of Technical Staff to serve as the technical authority for advanced RRAM (Resistive RAM) technology development. This role provides end‑to‑end leadership across RRAM device physics, stack engineering, bitcell and macro architecture, and test methodology optimization. The SMTS will define the long‑term technical roadmap for RRAM platforms and ensure successful translation from research concepts to manufacturable, high‑quality memory solutions for embedded and standalone applications. This position requires deep hands‑on expertise combined with system‑level thinking, strong technical judgment, and the ability to influence cross‑functional teams and senior stakeholders.

Key Responsibilities

RRAM Architecture and Design Leadership

Define and own RRAM bitcell and macro architecture, including scaling strategies, array topology, sensing schemes, redundancy, and robustness margins.

Lead architecture trade‑offs balancing performance, power, area, variability, endurance, and retention for product‑level requirements.

Partner with circuit and SoC (design) teams to ensure seamless macro integration into customer designs.

RRAM Stack and Device Technology

Set technical direction for RRAM stack layer optimization, including material selection, interface control, thickness scaling, and variability reduction.

Drive deep understanding of RRAM switching physics, forming mechanisms, defect engineering, and reliability failure modes.

Work closely with process integration teams to ensure compatibility with advanced BEOL/FEOL flows and cost‑effective manufacturing.

Test, Characterization, and Reliability

Own definition and optimization of electrical test conditions, including forming, set/reset algorithms, read methodologies, and stress conditions.

Define the associated RRAM ET parameters target and specification.

Lead comprehensive DC/AC characterization, array‑level analysis, and qualification strategies to meet product and customer reliability requirements.

Drive silicon learning, root‑cause analysis, and yield/reliability improvement based on statistical data and failure analysis.

Program and Technical Leadership

Act as the primary technical decision‑maker for RRAM programs, resolving complex cross‑disciplinary trade‑offs.

Guide multiple project teams from early concept through silicon validation, product qualification, and technology transfer.

Represent RRAM technology in executive reviews, customer engagements, and technical forums.

Talent and Knowledge Development

Mentor and junior engineers, building long‑term RRAM technical depth within the organization.

Establish best practices, design guidelines, and institutional knowledge for scalable RRAM development.

Required Qualifications

PhD or MS in Electrical Engineering, Materials Science, Physics, or related field with 12+ years of RRAM or emerging NVM development experience.

Recognized expert in RRAM device physics, stack engineering, bitcell/macro design, and reliability characterization.

Proven track record of driving RRAM technologies into silicon platforms or products.

Strong leadership, communication, and cross‑functional influence skills.

GlobalFoundries is an equal opportunity employer, cultivating a diverse and inclusive workforce. We believe having a multicultural workplace enhances productivity, efficiency and innovation whilst our employees feel truly respected, valued and heard. As an affirmative employer, all qualified applicants are considered for employment regardless of age, ethnicity, marital status, citizenship, race, religion, political affiliation, gender, sexual orientation and medical and/or physical abilities. All offers of employment with GlobalFoundries are conditioned upon the successful completion of background checks, medical screenings as applicable and subject to the respective local laws and regulations. Information about our benefits you can find here: https://gf.com/about-us/careers/opportunities-asia

We shape what's essential At GlobalFoundries you will find a vibrant work environment where collaboration and innovation thrive. Our diverse and global team shares a culture of respect and inclusivity, representing the best in the industry. We celebrate success together and are united by our dedication to excellence and our desire to improve and empower the world.