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Home Vacancies NAND Process Integration Engineer at Micron (Singapore)
July 29, 2025
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Micron is hiring for a Senior/Principal NAND Process Integration Engineer in Singapore R&D. Lead structural innovation, material selection, and electrical optimization for next-gen 3D NAND memory — a key career path in nanoelectronics R&D.
Field
Nanotechnology, Electrical Engineering, Microelectronics, Materials Science, Chemical Engineering
Title Senior/Principal NAND Process Integration Engineer
Organization Micron Technology Inc.
Work Location Singapore
Research Focus 3D NAND Process Integration, Yield Engineering, Device Reliability
Application Deadline Rolling
Posted Date July 2025
Required Education BS/MS/PhD in Electrical Engg., Materials, Chemical Engg., or related fields
Required Experience 3+ years in semiconductor process, preferably NAND process integration
Micron’s NAND Technology Integration (NTI) group in Singapore is driving the evolution of 3D NAND flash with novel process structures, tighter geometries, and better reliability. As a Process Integration Engineer, you’ll own key modules in the vertical integration flow, optimizing both materials and electrical performance from first silicon to HVM transfer.
Your work will bridge across:
Structural spec and electrical reliability optimization
New material screening and process modeling
Parametric, structural, and failure analysis for 3D NAND
Full cycle of R&D to manufacturing handoff
IP generation, innovation, and experimental design
This is a rare opportunity to impact sub-10nm technology nodes and future non-volatile memory platforms using advanced nanoengineering strategies.
Expertise in NAND process integration or semiconductor device R&D
Strong grasp of device-structure-performance interactions
Hands-on with data analysis tools: Python, Power BI, Tableau, JMP, etc.
Able to lead module development across materials, fab, and yield teams
Passion for technology transfer, innovation, and end-to-end device development
Preferred:
Prior experience in NAND architecture, structural yield loss, or BEOL interactions
Exposure to SolidWorks, DOE methodology, and memory reliability testing
PhD/MS with 3+ years of process or device R&D experience
Micron’s Singapore fab is one of the world’s largest and most advanced NAND manufacturing sites, offering:
A strong R&D ecosystem in non-volatile memory
Global exposure to leading fabs and technology nodes
A culture of IP creation, learning, and collaboration
Access to cutting-edge equipment and cross-domain mentorship
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