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KAUST FuN Lab in Thuwal, Saudi Arabia invites postdoctoral researchers to join two positions focusing on colloidal quantum dots for infrared photodetectors. The project aims to build a materials-to-device platform using III-V CQDs and extended-SWIR PbS/PbSe CQDs with emphasis on surface reconstruction, ligand engineering, and thin-film processing.
The successful candidates will work on CQD synthesis, surface chemistry, device integration, and high-impact publications, collaborating with a
King Abdullah University of Science and Technology (KAUST)
Dec 03, 2026 at 11:59 PM Eastern Time
Postdoctoral Research Positions in Colloidal Quantum Dots for Infrared Photodetectors
The FuN Lab at KAUST has made significant advances in III-V colloidal quantum dots (CQDs) and extended-SWIR PbS materials for high-performance infrared photodetectors and imaging systems. We invite applications for two postdoctoral positions focused on next-generation SWIR and room-temperature MWIR photodetectors based on III-V, Ag2Te, and related CQDs.
The project aims to establish a materials-to-device platform using InAs-, InSb-, Ag2Te-, and extended-SWIR PbS/PbSe-based CQDs, with emphasis on surface reconstruction, ligand engineering, precursor chemistry, energetic band alignment, low-trap-density CQD solids, and novel infrared photodetector architectures.
The first position focuses on CQD synthesis and surface chemistry, including solution-phase ligand exchange and thin-film engineering. The second position focuses on novel infrared photodetector architectures incorporating metasurfaces and optical-field manipulation for high-performance SWIR and exploratory room-temperature MWIR detection.
Candidates should hold a PhD in chemistry, materials science, electrical engineering, applied physics, or a related field, with expertise in colloidal nanocrystal synthesis or optoelectronic device physics. Experience in III-V CQDs, infrared photodetectors, surface spectroscopy, thin-film processing, or low-noise optoelectronic measurements is highly desirable.
This position focuses on the chemical control of III-V CQD surfaces. The researcher will develop surface-reconstructed, low-trap-density CQDs and ligand-exchanged CQD inks for infrared photodetectors. The central goal is to understand and control how precursor reactivity, surface stoichiometry, ligand engineering, and electronic passivation determine charge transport, recombination, band alignment, and photodetector performance.
Key Objectives
Responsibilities
Successful candidates are expected to:
Preferred Experience
We will only accept applications through Interfolio. Submissions by email to the PI or any team member will not be considered.
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