Postdoc: CQD Infrared Photodetector Architectures

KAUST; Thuwal; On-site; SAR 150,000 - 220,000; Full time

Job description

King Abdullah University of Science and Technology: Postdoc Positions: Physical Science and Engineering Division (postdoc): Material Science and Engineering (postdoc)

Location

King Abdullah University of Science and Technology (KAUST)

Open Date

Deadline

Dec 03, 2026 at 11:59 PM Eastern Time

Description

Postdoctoral Research Positions in Colloidal Quantum Dots for Infrared Photodetectors

Our lab has made significant advances in III‑V colloidal quantum dots (CQDs) and extended‑SWIR PbS materials for high-performance infrared photodetectors and imaging systems. We invite applications for two postdoctoral positions focused on next‑generation SWIR and room‑temperature MWIR photodetectors based on III‑V, Ag₂Te, and related CQDs.

The project aims to establish a materials‑to‑device platform using InAs‑, InSb‑, Ag₂Te‑, and extended‑SWIR PbS/PbSe‑based CQDs, with emphasis on surface reconstruction, ligand engineering, precursor chemistry, energetic band alignment, low‑trap‑density CQD solids, and novel infrared photodetector architectures.

The first position focuses on CQD synthesis and surface chemistry, including solution‑phase ligand exchange and thin‑film engineering. The second position focuses on novel infrared photodetector architectures incorporating metasurfaces and optical‑field manipulation for high‑performance SWIR and exploratory room‑temperature MWIR detection.

Candidates should hold a PhD in chemistry, materials science, electrical engineering, applied physics, or a related field, with expertise in colloidal nanocrystal synthesis or optoelectronic device physics. Experience in III‑V CQDs, infrared photodetectors, surface spectroscopy, thin‑film processing, or low‑noise optoelectronic measurements is highly desirable.

We seek a postdoctoral researcher to develop novel SWIR and exploratory room‑temperature MWIR photodetectors based on CQDs. The position focuses on device architecture design, charge‑transport‑layer engineering, dark‑current suppression, metasurface integration, optical‑field manipulation, and low‑noise detector characterization. The successful candidate will translate optimized CQD solids into high‑performance infrared photodetectors with enhanced light absorption, carrier extraction, and operational stability.

Key Objectives

• Design novel infrared photodetector architectures integrating CQD thin films with metasurfaces, optical cavities, plasmonic resonators, and other light‑management structures.
• Develop high‑performance SWIR CQD photodetectors using III‑V CQDs and related materials.
• Explore room‑temperature MWIR detection using narrow‑bandgap CQDs and heterostructures.
• Design device architectures that suppress dark current and enhance photocarrier extraction.
• Study charge transport, recombination, noise, response speed, and operational stability.
• Develop photodiode and LED platforms for infrared detection.
• Establish quantitative structure–property–device relationships in collaboration with the surface‑chemistry postdoc.

Responsibilities

• Fabricate CQD infrared photodetectors using solution‑processed thin films.
• Optimize device structures, transport layers, electrodes, and interfacial layers.
• Measure and analyze responsivity, EQE, detectivity, dark current, noise spectral density, linear dynamic range, response time, and stability.
• Investigate dark‑current mechanisms, trap‑assisted transport, carrier mobility, and recombination dynamics.
• Develop strategies for room‑temperature SWIR and MWIR operation.
• Collaborate with the CQD chemistry team to correlate ligand chemistry and surface passivation with device performance.
• Prepare high‑quality manuscripts and present results at conferences.

Successful candidates are expected to:

• Work independently while contributing to a collaborative research program.
• Maintain rigorous experimental records and reproducible protocols.
• Develop mechanistic understanding beyond empirical optimization.
• Publish in high‑impact journals in materials chemistry, nanoscience, and optoelectronics.
• Mentor graduate students and contribute to a strong laboratory culture.
• Communicate results clearly in manuscripts, presentations, and group meetings.

Qualifications

• PhD in materials science, electrical engineering, applied physics, photonics, chemical engineering, or a related field.
• Strong experience in thin‑film optoelectronic device fabrication.
• Knowledge of photodetector physics, semiconductor junctions, charge transport, and recombination.
• Experience measuring optoelectronic device performance.
• Ability to analyze current–voltage behavior, spectral response, noise, and transient photocurrent.
• Strong publication record in photodetectors, CQD devices, infrared optoelectronics, or semiconductor devices.

Preferred Experience

• Experience with CQD photodetectors, especially SWIR or MWIR detectors.
• Experience with photodiodes, phototransistors, or photoconductive detectors.
• Knowledge of low‑noise measurements and detectivity analysis.
• Experience with interfacial engineering and transport‑layer optimization.
• Familiarity with narrow‑bandgap semiconductors such as InAs, InSb, Ag₂Te, HgTe, PbS, PbSe, or related CQD systems.
• Experience with optical‑field enhancement, cavity structures, plasmonic enhancement, or photogating mechanisms.
• Design device architectures that suppress dark current and enhance photocarrier extraction.
• Study charge transport, recombination, noise, response speed, and operational stability.
• Develop photodiode and LED platforms for infrared detection.
• Establish quantitative structure–property–device relationships in collaboration with the surface‑chemistry postdoc.

Application Instructions

We will only accept applications through Interfolio. Submissions by email to the PI or any team member will not be considered.

Application Process

This institution is using Interfolio's Faculty Search to conduct this search. Applicants to this position receive a free Dossier account and can send all application materials, including confidential letters of recommendation, free of charge.