PhD: Wideband Balun Tech for Next‑Gen IC Packaging

Tyndall; Cork; Hybride; EUR 23 000 - 28 000; Plein temps

Avantages offerts par ce poste

Full PhD funding

Tax-free stipend

Tuition fees paid

Access to fabrication facilities

Résumé du poste

Tyndall National Institute invites applications for a fully funded PhD opportunity in wideband balun technologies and advanced IC packaging, conducted with AMD collaboration. The project combines RF/mm-wave modelling, fabrication, and experimental validation within a leading European research environment.

The successful candidate will engage with industry and academia, thrive in a multidisciplinary setting, and contribute to high-impact research with broad application in next‑generation IC

Qualifications

• Have or expect to obtain a First-Class Honours degree in Electrical/Electronic Engineering, Physics, Applied Physics, or a closely related discipline.
• Strong foundation in electromagnetics, RF/microwave engineering.
• Proficiency in written and spoken English.
• Experience with RF/electromagnetic CAD tools such as Keysight ADS.

Responsabilités

• Conduct modelling, design, fabrication and validation of wideband balun structures.
• Perform RF/mm-wave measurements and characterisation.
• Collaborate with AMD and academia on knowledge exchange.
• Prepare technical documentation and disseminate findings.

Connaissances

Electromagnetics

RF/Microwave engineering

Independent researcher

Formation

First-Class Honours in Electrical/Electronic Engineering or Physics

Outils

Keysight ADS

MATLAB

Description du poste

Tyndall National Institute invites applications for a fully funded PhD opportunity in wideband balun technologies and advanced IC packaging, conducted with AMD collaboration. The project combines RF/mm-wave modelling, fabrication, and experimental validation within a leading European research environment.

The successful candidate will engage with industry and academia, thrive in a multidisciplinary setting, and contribute to high-impact research with broad application in next‑generation IC