Postdoc: Ferroelectric Gate-Tuned 2DEG Superconductivity

CNRS; France; Sur place; EUR 36 000 - 48 000; Plein temps

Résumé du poste

Laboratoire Albert Fert (CNRS, Thales, Université Paris-Saclay) in Palaiseau seeks a First Stage Researcher (R1) to develop field-effect transistors using a KTaO3-based 2DEG with a ferroelectric HfZrO2 gate. The project targets nonvolatile control of electronic properties and exploration of the superconducting state in oxide heterostructures.

The candidate will grow thin films, characterize interfaces, fabricate devices in cleanroom, and study polarization effects at low temperature.

Qualifications

• PhD in physics or closely related field.
• Experience in oxide thin-film growth using ALD/PLD.
• Strong background in condensed matter physics and 2DEG systems.
• Proficiency in data analysis and scientific programming (Python).
• Good written and spoken English.

Responsabilités

• Grow HZO thin films by ALD and/or PLD and optimize deposition.
• Characterize heterostructures by XRD, AFM and XPS.
• Fabricate capacitors and transistors using lithography and deposition.
• Measure ferroelectric properties and perform PUND tests.
• Conduct resistance and Hall measurements before/after gate integration.
• Explore low-temperature effects on Tc and superconductivity.
• Analyze data, document protocols, and publish results; present at conferences.

Connaissances

Condensed matter physics

Thin-film devices

Oxide thin-film growth

Electrical measurements

Low-temperature experiments

Python data analysis

English communication

Team collaboration

Formation

PhD in Physics or related field

Outils

Python

LabVIEW

XRD

AFM

XPS

Description du poste

Laboratoire Albert Fert (CNRS, Thales, Université Paris-Saclay) in Palaiseau seeks a First Stage Researcher (R1) to develop field-effect transistors using a KTaO3-based 2DEG with a ferroelectric HfZrO2 gate. The project targets nonvolatile control of electronic properties and exploration of the superconducting state in oxide heterostructures.

The candidate will grow thin films, characterize interfaces, fabricate devices in cleanroom, and study polarization effects at low temperature.