POST-DOC: Ferroelectric control of superconducting 2-dimensional electron gases (M/F)

CNRS; France; On-site; EUR 36,000 - 48,000; Full time

Job summary

Laboratoire Albert Fert (CNRS, Thales, Université Paris-Saclay) in Palaiseau seeks a First Stage Researcher (R1) to develop field-effect transistors using a KTaO3-based 2DEG with a ferroelectric HfZrO2 gate. The project targets nonvolatile control of electronic properties and exploration of the superconducting state in oxide heterostructures.

The candidate will grow thin films, characterize interfaces, fabricate devices in cleanroom, and study polarization effects at low temperature.

Qualifications

• PhD in physics or closely related field.
• Experience in oxide thin-film growth using ALD/PLD.
• Strong background in condensed matter physics and 2DEG systems.
• Proficiency in data analysis and scientific programming (Python).
• Good written and spoken English.

Responsibilities

• Grow HZO thin films by ALD and/or PLD and optimize deposition.
• Characterize heterostructures by XRD, AFM and XPS.
• Fabricate capacitors and transistors using lithography and deposition.
• Measure ferroelectric properties and perform PUND tests.
• Conduct resistance and Hall measurements before/after gate integration.
• Explore low-temperature effects on Tc and superconductivity.
• Analyze data, document protocols, and publish results; present at conferences.

Skills

Condensed matter physics

Thin-film devices

Oxide thin-film growth

Electrical measurements

Low-temperature experiments

Python data analysis

English communication

Team collaboration

Education

PhD in Physics or related field

Tools

Python

LabVIEW

XRD

AFM

XPS

Job description

Organisation/Company CNRS Department Laboratoire Albert Fert Research Field Physics Physics Solid state physics Physics Surface physics Researcher Profile First Stage Researcher (R1) Application Deadline 16 Nov 2026 - 23:59 (UTC) Country France Type of Contract Temporary Job Status Full-time Hours Per Week 35 Offer Starting Date 1 Jan 2027 Is the job funded through the EU Research Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No

Offer Description

Develop field-effect transistors combining a KTaO3-based two-dimensional electron gas (2DEG) with a HfZrO2 (HZO) ferroelectric gate. The project aims to achieve nonvolatile control of the electronic properties of the 2DEG through ferroelectric polarization while preserving the quality of the conducting interface.
The successful candidate will investigate the relationship between polarization, carrier density and mobility, then explore control of the superconducting state in heterostructures that remain superconducting after gate integration.

• Grow HZO thin films by atomic layer deposition (ALD) and/or pulsed laser deposition (PLD). Optimize deposition conditions, annealing and electrode materials to obtain switchable polarization while preserving the 2DEG.
• Characterize heterostructure structure, morphology and composition using X-ray diffraction, atomic force microscopy and X-ray photoelectron spectroscopy.
• Fabricate capacitors and transistors in the cleanroom using optical and/or electron-beam lithography, electrode deposition and etching.
• Measure ferroelectric properties using polarization loops, positive-up-negative-down (PUND) protocols and piezoresponse force microscopy. Assess retention and endurance and distinguish ferroelectric switching from charge trapping or ionic migration.
• Perform resistance and Hall measurements before and after gate integration, then following voltage pulses, with readout at zero gate voltage.
• Explore at low temperature how the critical temperature and, where accessible, the superconductor-insulator transition depend on polarization and KTaO3 orientation.
• Analyze data, document experimental protocols and write scientific publications. Present results to project partners and at conferences.

The position is based at Laboratoire Albert Fert (CNRS, Thales, Université Paris-Saclay) in Palaiseau, within the Oxitronics team, under the supervision of Manuel Bibes. The project combines ferroelectricity, oxide interface physics and two-dimensional superconductivity.
The successful candidate will work with the laboratory's researchers, engineers and PhD students and have access to thin-film growth, characterization and microfabrication facilities. Measurements at very low temperatures will be conducted in collaboration with Nicolas Bergeal at ESPCI Paris. Comparisons between KTaO3 (111), (110) and (001) will enable investigation of the role of crystal orientation.

• Strong background in condensed matter physics and thin-film electronic devices.
• Experimental experience in oxide thin-film growth, particularly ALD or PLD. Experience with hafnia-based ferroelectrics would be particularly valuable.
• Knowledge of structural characterization methods and electrical measurements of ferroelectrics. Experience with PUND protocols or piezoresponse force microscopy would be an asset.
• Experience in cleanroom microfabrication and optical or electron-beam lithography is desirable.
• Skills in electronic transport, Hall measurements and low-temperature experiments are desirable. Knowledge of oxide 2DEGs or superconductivity would be an asset.
• Proficiency in data analysis and scientific programming, particularly Python. Experience in measurement automation, for example using LabVIEW, is desirable.
• Experimental rigor, independence and the ability to work within a team. Good scientific writing and communication skills in English.