PhD Position : Low temperature transport and Transmission Electron Microscopy of silicon aluminum interfaces

COFUND QuanG; France; Sur place; EUR 20 000 - 28 000; Plein temps

Résumé du poste

COFUND QuanG in France offers a PhD position within the QuanG2 PhD Call for Applications. The project focuses on fabricating silicon membranes on SOI and studying Al-Si interfaces with TEM and low-temperature transport, aiming to observe charge-related phenomena and interface evolution under in-situ TEM biasing.

The PhD candidate will fabricate silicon membranes, contribute to device conception, carry out low-temperature transport and TEM experiments, and analyze data under supervision, with

Qualifications

• Interest in solid state, experimental and low temperature physics.
• Affinity with programming (in python), mathematics and simulations is a plus.
• Interest in quantum dot structures and advanced characterization techniques like transmission electron microscopy.

Responsabilités

• Fabrication and characterization work as part of the PhD project.
• Contribute to device conception and device fabrication at TU Vienna.
• Perform low temperature transport measurements and TEM experiments with supervisor support.
• Data analysis and interpretation of results.
• Publish findings and present at group meetings.

Connaissances

Solid state physics

Programming (Python)

Quantum dot structures

Formation

Master’s degree or equivalent

Description du poste

Organisation/Company COFUND QuanG Research Field Physics Researcher Profile First Stage Researcher (R1) Positions PhD Positions Application Deadline 7 Sep 2026 - 12:00 (Europe/Paris) Country France Type of Contract Temporary Job Status Full-time Offer Starting Date 1 Feb 2027 Is the job funded through the EU Research Framework Programme? Horizon Europe – COFUND Reference Number 101261699 Is the Job related to staff position within a Research Infrastructure? No

Offer Description

General Scope:
The combination of superconducting and semiconducting materials at nm length scales is an intensely studied topic as new device functionalities can be realized by combining these material combinations at such small length scales. In particular, these structures are regarded as promising building blocks for quantum computing. More specifically, the Al-Ge and Al-Si material combination has been studied in depth in our groups during the last 10 years, both for its structural aspect by using transmission electron microscopy (TEM) [1,2] as well as by low temperature transport [3], in collaboration with researchers at the Technical University of Vienna, Austria. The most intriguing aspect of this material combination is that upon heating an Al contacted semiconductor section, an exchange phenomenon takes place where Al enters the semiconducting material from the contact pads, while the semiconductor material flows through a surface diffusion channel into surfaces and grain boundaries in the Al contact pad [2]. In this way, an atomically abrupt interface propagates into the semiconducting region during the annealing, see fig.1 [4]. After heating is stopped, a semiconducting region of well-defined length is then created between two mono crystalline aluminum contacts. Both the interface properties (Josephson effect) as well as quantum size effects due to the size of the semiconducting region (for example Coulomb blockade) can be studied at low temperature.

PhD Subject:
This project aims to fabricate silicon membranes starting from silicon on insulator (SOI) substrates. Our collaborator at TU Vienna (Alois Lugstein and his group) is currently working on the exchange reaction of aluminum with silicon strips defined in SOI. The same fabrication process will be applied to the silicon membranes, to create the same structure compatible with TEM characterization. These Al-
Si interfaces will then be studied by low temperature transport. All results will then be correlated by TEM characterization of the identical interface, regarding interface abruptness and shape, as well as crystalline quality. It is then possible to go a step further and perform in-situ heating in the TEM to follow the advancement of the Al propagation reaction. To better understand the electrical properties of such
a sample, in-situ biasing experiments can be performed in the TEM, both electron beam induced current as well as 4D STEM, to visualize internal fields that may occur at Schottky contacts. Finally, it may even be possible to combine low temperature transport and TEM directly in the TEM using an in-situ biasing cryogenic TEM sample holder. The aim here is to establish the possibilities, and potentially observe charge related phenomena in the TEM.

The student’s work will involve:

• (i) Fabrication of silicon membranes. (support supervisor and nanofab cleanroom staff).
• (ii) Contributing to the device conception, fabrication will be carried out at TU Vienna.
• (iii) Carrying out low temperature transport measurements.
• (iv) Carrying out TEM experiments (support from supervisor).
• (v) Data analysis and interpretation.

Required Skills:

• Interest in solid state, experimental and low temperature physics.
• Affinity with programming (in python), mathematics and simulations is a plus.
• Interest in quantum dot structures and advanced characterization techniques like transmission electron microscopy.

Applicants must hold a Master’s degree or an equivalent qualification by the application deadline and must not already hold a doctoral degree. Applicants must also comply with the MSCA mobility rule: they must not have resided or carried out their main activity (work, studies, etc.) in France for more than 12 months during the 36 months immediately preceding the application deadline. Applicants must not be current employees of the host laboratory. There are no nationality or age restrictions.

Additional comments

About the QuanG2 PhD Call

This PhD position is offered as part of the QuanG2 PhD Call for Applications, a doctoral programme coordinated by Université Grenoble Alpes and dedicated to training the next generation of researchers in quantum science and technology. The programme offers fully funded three-year PhD positions within the Grenoble quantum research ecosystem, providing doctoral candidates with a high-level international research environment and dedicated funding for their research and training activities.

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