“OXIDE MATERIALS FOR HIGH POWER ELECTRONIC DEVICES“

Université Paris Saclay, Universite de Versailles, CNRS

Versailles

On-site

EUR 7,800 - 11,000

Part time

4 days ago
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Benefits offered by this job

Transportation reimbursement

Job summary

GEMAC CNRS Versailles invites applications for an internship focused on oxide materials for high power electronic devices. The student will study how thin-film growth conditions affect structural, electrical, and optical properties within a collaborative project involving national and international partners.

Required background in solid state/semiconductor physics, plus fluency in English and French; strong instrumentation and data analysis skills are expected.

Qualifications

  • Very strong background in solid state physics/semiconductors science.
  • Fluent in English and French.
  • Motivation to learn power electronics device principles.
  • Ability to analyze and process data.
  • Willingness to work independently and in a team.

Responsibilities

  • Preparation of electrical contacts.
  • Electrical transport measurements (I-V, C-V, Hall effect).
  • Optical measurements of transmittance and reflectance.
  • Structural characterization by XRD (X-ray diffraction).
  • Analysis and interpretation of experimental results; writing scientific reports.
  • Presenting results at scientific meetings; regular interactions with partners.

Skills

Solid state physics
Semiconductors
Data analysis
English
French

Education

Engineering school background

Job description

“OXIDE MATERIALS FOR HIGH POWER ELECTRONIC DEVICES“

11/10/2026

semiconductors; Oxides; Electronic properties;

LABORATOIRE: GROUPE D’ETUDES DE LA MATIERE CONDENSEE(GEMAC)
UMR 8635 UNIVERSITE DE VERSAILLES ST QUENTIN EN Y. - CNRS


ADRESSE: 45 AVENUE DES ETATS-UNIS, 78035 VERSAILLES CEDEX

Description

Context: the energy transition and the reduction of co₂ emissions require the development of power electronic devices that are ever more high-performance, efficient, and compact. wide-gap semiconductors, such as sic and gan, are currently being extensively researched for medium-power applications, particularly in hybrid and electric vehicles. for higher-power applications, such as smart grids or rail transportation, very wide-gap materials, such as ga₂o₃ and nioₓ-based heterostructures, show great potential. this internship is part of the goten – pepr électronique project, https://www.pepr-electronique.fr/goten/

tasks: the internship will focus on studying the influence of thin-film growth conditions on their structural, electrical, and optical properties.

the main activities will include:

  • preparation of electrical contacts;
  • electrical transport measurements (i-v, c-v, hall effect);
  • optical measurements of transmittance and reflectance;
  • structural characterization by x-ray diffraction (xrd);
  • analysis and interpretation of experimental results;
  • writing scientific reports;
  • presenting results at scientific meetings;
  • regular interactions with the project’s french and international partners.

looking for profile of student

student from an engineering school or university, with a background in:

  • semiconductor physics; materials physics; electronics;

Desired skills

  • interest in experimentation and scientific instrumentation;
  • knowledge of materials physics and/or semiconductor physics;
  • Fluent in English;
  • ability to analyze and process data;
  • independence, and motivation;
  • ability to work in a team and meet deadlines.

what the internship offers: this internship will provide practical experience in the characterization of semiconductor materials, instrumentation, and data analysis, as part of a collaborative research project with national and international partners.

Possibility to prolong for theses:

Will be determined on the base of performance

gratification and reimbursement of transportation(work-home) 50% of cost

Profil

REQUIRED SKILLS: Very Strong background in solid state physics/semiconductors science(!);

English and French languages;

Motivation to learn power electronics device principals and applications.

Willing to learn experimental measurements and scientific instrumentation;

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