PhD: Atomic-Scale InAs/Sn Interfaces for Quantum Devices

Euraxess; Grenoble; Hybride; EUR 28 000 - 36 000; Plein temps

Avantages offerts par ce poste

Fully funded PhD (3 years)

Résumé du poste

Euraxess in Grenoble invites applications for a PhD position hosted by Institut Néel. The project investigates InAs/Sn nanostructures for tunable Josephson junctions in quantum devices, using TEM, GPA, EDX, and growth modeling to understand interfaces and strain.

The PhD is fully funded for three years under the QuanG2 PhD Call, with international collaboration and access to state-of-the-art facilities, including PHELIQS for X-ray diffraction and in situ TEM measurements.

Qualifications

• Master's degree or equivalent by the application deadline.
• Must comply with MSCA mobility rule: they must not have resided or carried out their main activity in France for more than 12 months during the 36 months immediately preceding the application deadline.
• There are no nationality or age restrictions.

Responsabilités

• Conduct TEM studies of InAs/Sn nanostructures to improve interfaces.
• Characterize atomic structure and chemical distribution using GPA, EDX, and growth modeling.
• Collaborate with international partners and perform measurements at PHELIQS and Institut Néel.

Connaissances

Semiconductor and solid-state physics

Formation

Master’s degree or equivalent

Description du poste

Euraxess in Grenoble invites applications for a PhD position hosted by Institut Néel. The project investigates InAs/Sn nanostructures for tunable Josephson junctions in quantum devices, using TEM, GPA, EDX, and growth modeling to understand interfaces and strain.

The PhD is fully funded for three years under the QuanG2 PhD Call, with international collaboration and access to state-of-the-art facilities, including PHELIQS for X-ray diffraction and in situ TEM measurements.