MicroLED Device Engineer (GaN on Silicon)

Aledia; Champagnier; Hybride; EUR 55 000 - 75 000; Plein temps

Avantages offerts par ce poste

Teleworking possible

Résumé du poste

Aledia is seeking a Device Engineer for Microelectronics to advance microLED performance through rigorous electro-optical analysis and optimization. You will work within a multidisciplinary team, collaborating with epitaxy, characterization, testing and process groups to improve efficiency and uniformity.

The role requires PhD or equivalent experience, strong knowledge of GaN semiconductors, and proficiency with CL/PL/TEM/Raman techniques, with professional English as a minimum language.

Qualifications

• PhD or equivalent first experience preferred in a research or innovation environment.
• Extensive knowledge of microelectronics and semiconductors, particularly GaN-type III-V semiconductors.
• Mastery of techniques for characterizing electro-optical properties (CL, PL, TEM, Raman, etc.).
• Languages: Professional English.

Responsabilités

• Characterize and analyze electro-optical properties of microLEDs to optimize efficiency and uniformity.
• Develop experimental plans and coordinate with epitaxy, characterization and process teams.
• Develop and apply characterization benches and data analysis routines.
• Write technical reports and present results in meetings.
• Contribute to IP development based on project results.

Connaissances

GaN type III-V semiconductors

Electro-optical characterization

Data analysis

Measurement benches development

Team collaboration

Formation

Master/Engineer/PhD in materials or semiconductors

Outils

CL/PL/TEM/Raman techniques

Description du poste

Aledia is seeking a Device Engineer for Microelectronics to advance microLED performance through rigorous electro-optical analysis and optimization. You will work within a multidisciplinary team, collaborating with epitaxy, characterization, testing and process groups to improve efficiency and uniformity.

The role requires PhD or equivalent experience, strong knowledge of GaN semiconductors, and proficiency with CL/PL/TEM/Raman techniques, with professional English as a minimum language.