Device Engineer – Microelectronics (GaN on Silicon, Nano LED, 3D Integration) M/F

Aledia; Champagnier; Sur place; EUR 55 000 - 75 000; Plein temps

Avantages offerts par ce poste

Teleworking possible

Résumé du poste

Aledia is seeking a Device Engineer for Microelectronics to advance microLED performance through rigorous electro-optical analysis and optimization. You will work within a multidisciplinary team, collaborating with epitaxy, characterization, testing and process groups to improve efficiency and uniformity.

The role requires PhD or equivalent experience, strong knowledge of GaN semiconductors, and proficiency with CL/PL/TEM/Raman techniques, with professional English as a minimum language.

Qualifications

• PhD or equivalent first experience preferred in a research or innovation environment.
• Extensive knowledge of microelectronics and semiconductors, particularly GaN-type III-V semiconductors.
• Mastery of techniques for characterizing electro-optical properties (CL, PL, TEM, Raman, etc.).
• Languages: Professional English.

Responsabilités

• Characterize and analyze electro-optical properties of microLEDs to optimize efficiency and uniformity.
• Develop experimental plans and coordinate with epitaxy, characterization and process teams.
• Develop and apply characterization benches and data analysis routines.
• Write technical reports and present results in meetings.
• Contribute to IP development based on project results.

Connaissances

GaN type III-V semiconductors

Electro-optical characterization

Data analysis

Measurement benches development

Team collaboration

Formation

Master/Engineer/PhD in materials or semiconductors

Outils

CL/PL/TEM/Raman techniques

Description du poste

Device Engineer – Microelectronics (GaN on Silicon, Nano LED, 3D Integration) M/F

Posted on 23 July 2026 long-term contract, Champagnier microelectronics

Company context:
We are an innovative and leading company in the field of micro LEDs, specializing in the microelectronic design of high-performance solutions for advanced applications such as next-generation screen displays, virtual reality solutions, and optical links for communication in data centers. We develop cutting-edge components, including 3D GaN-on-silicon nanowire-based microLEDs, and are looking for an engineer to strengthen our development team.

Main mission :

Reporting to the Device and Process Integration Manager, the Device Engineer will actively participate in optimizing microLED performance. Their main role will be to characterize, analyze, and improve the electro-optical properties of microLEDs, focusing on recombination mechanisms and charge transport to optimize microLED efficiency and uniformity and reduce defects. This work will be carried out within a multidisciplinary team, in close collaboration with the epitaxy, characterization, testing, and process teams.

Your main missions:

• Performance increase of microLEDs:
• Analysis of the electro-optical properties of µLEDs (efficiency, uniformity, defectivity).
• Characterization of recombination mechanisms and charge transport.
• Proposal and implementation of experimental plans to optimize performance.
• Coordination with the epitaxy, characterization and process teams to identify areas for improvement.
• Facilitating working groups aimed at increasing component performance.
• Analysis methodology:
• Development and application of appropriate characterization plans (CL, PL, TEM, Raman, EDX, EBIC, IVLT).
• Collaboration with the epitaxy, simulation and design teams to solve technical problems.
• To guarantee the quality and reliability of the measurements taken.
• Development of characterization methods:
• Participate in adapting measurement benches for specific test needs.
• Developing data analysis routines to make them usable by operational teams.
• Ensure the state of the art of the characterizations used and adapt them to the needs of the project.
• Quality and documentation:
• Writing technical reports detailing the results of the analyses.
• Presentation of results during technical meetings.
• Implementation and monitoring of quality procedures and root cause analyses to ensure the reliability of results.
• Intellectual property :
• Contribution to the development of new intellectual property based on the developments carried out.

Required profile :

• Diploma : Bac+5 to Bac+8 in materials, semiconductors or similar fields (Master, Engineer, PhD).
• Experience: PhD or equivalent first experience preferred in a research or innovation environment.
• Technical skills :
  • Extensive knowledge of microelectronics and semiconductors, particularly GaN type III-V semiconductors, is desirable.
  • Mastery of techniques for characterizing electro-optical properties (CL, PL, TEM, Raman, etc.).
  • Skills in complex data analysis.
  • Experience in developing measurement benches is a plus
• Languages: Professional English.
• Personal qualities : Team spirit, responsiveness, analytical and synthesis skills, autonomy, organization and the ability to communicate effectively with multidisciplinary teams.
• Innovation at the heart of technology: Join a dynamic company at the forefront of microelectronics research and participate in exciting projects on disruptive technologies.
• Interdisciplinary collaboration: Work with experts in various fields (epitaxy, simulation, design, process) and develop your skills in a stimulating environment.
• Professional development: Opportunities to grow within a team with a strong culture of innovation.

Type of contract: CDI
Location: Champagnier
Working hours: Full time, Monday to Friday, daytime hours – teleworking possible
Published on: 23/07/2026