Senior Principal Design Engineer

Nexperia; München; Vor Ort; EUR 100.000 - 125.000; Vollzeit

Zusammenfassung

An innovative firm is seeking an experienced power device designer to join their high-power chip technology development team. This role involves designing and developing cutting-edge technology for high-power chips, focusing on improving device performance, reliability, and manufacturability. The successful candidate will lead project teams, conduct simulations, and guide technical employees, ensuring timely project deliveries. If you have a passion for advancing power device technology and thrive in a global, intercultural environment, this is an exciting opportunity to make a significant impact in the industry.

Qualifikationen

• 8+ years of experience in IGBT or FRD design and processing.
• Hands-on experience in power device design and technology development.

Aufgaben

• Build technology platforms for power device design and development.
• Improve overall performance and reliability of existing products.

Kenntnisse

Power device design

TCAD process and device simulation

Device physics

Reliability and robustness design

Problem-solving

Leadership

English proficiency

Ausbildung

Master’s degree in Microelectronics

PhD in semiconductor-related fields

Jobbeschreibung

About the role:

The experienced candidate with suitable skills is required to carry out key tasks and to meet the deadline of the project. The successful candidate will work with a high-power chip technology development team to design and develop state-of-the-art technology and deliver world-class high-power chips on the market.

What you will do:

• Responsible for building a technology platform for power device (IGBT/FRD) design and new technology development to meet customer requirements in a manufacturable and cost-effective way
• Responsible for improving the device's overall performance for the existing products, in particular, improving the device's reliability and robustness
• Performing TCAD process and device simulations, and layout design
• Creating and maintaining design rules and generation rules when required using controlled procedures
• Responsible for engineering device tests (static, dynamic, reliability, etc) and data analysis; part of manual testing might be involved
• Responsible to guide and work with chip and other function teams to meet timely deliveries
• Train and advance the skills of existing technical employees to expand their capability and responsibility
• Experience of IGBT design for EV/HEV application preferred
• Encourage and manage the process of producing technical publications and invention patents

What you will need:

Hard Skills:

• Hand-on experience in power device design and technology development, fine geometry trench and thin wafer technology is necessary; 12” experience is a plus
• Proficiency in TCAD process and device simulation
• Understanding of power device physics, fabrication and characterization principles
• Knowledge and experience in design for reliability and robustness of power devices
• Ability to address design and engineering issues and to provide suitable solutions
• More than 8 years of working experience in IGBT (or FRD) design and/or processing
• Proficient in reading English literature and writing in English

Soft Skills:

• Leadership skills in building and leading project teams in a global, intercultural environment– “exemplified engagement”
• Master’s degree or above, major in Microelectronics or semiconductor-related
• Good communication skills in both oral and written English