Master thesis: Two-step epitaxy for laser diodes with buried (Al)GaN gratings – 20/25

Fbh Berlin; Berlin; Vor Ort; EUR 40.000 - 60.000; Teilzeit

Zusammenfassung

A leading research institute in Berlin is looking for a Master's student to contribute to laser diode development. The role involves optimizing epitaxy processes and characterizing semiconductor layers, providing hands-on experience in applied research. Ideal candidates should have a strong interest in experimental research and be enrolled in a relevant Master’s program. This is an excellent opportunity for those eager to dive into the field of photonics and optoelectronics.

Leistungen

Friendly and supportive team

Modern workplace

Exciting practical experience

Qualifikationen

• Enrolled in a Master’s program in a relevant field.
• Prior knowledge in optoelectronics and measurement technology.
• Strong interest in experimental research.

Aufgaben

• Contribute to the development of epitaxy processes for laser diodes.
• Plan and perform epitaxial growth processes using MOVPE.
• Characterize layers with specialized methods.

Kenntnisse

Knowledge in optoelectronics

Measurement technology

Applied physics

Interest in experimental research

Ausbildung

Master’s degree program in Physics, Electrical Engineering, or related field

Tools

Atomic Force Microscopy

X-ray Diffraction

Photoluminescence Spectroscopy

Jobbeschreibung

The Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH) is an application-oriented research institute in the fields of high-frequency electronics, photonics and quantum physics. It researches electronic and optical components, modules and systems based on compound semiconductors. These devices are key enablers that address the needs of today’s society in fields like communications, energy, health, and mobility. It covers the entire value chain from design to ready-for-delivery systems.

The Materials Technology Department is developing, among other things, laser diodes in the blue-violet spectral range (380nm to 430nm), which are used in applications such as sensing, optical projection, or quantum technologies.

Reference number 20/25

Your tasks

• Contribute to the development and optimization of the two-step epitaxy process for the fabrication of buried (Al)GaN gratings for DFB laser diodes
• Plan and carry out epitaxial growth processes using Metal-Organic Vapor Phase Epitaxy (MOVPE)
• Characterize the fabricated layers using methods such as:
  • Atomic Force Microscopy
  • X-ray Diffraction
  • Photoluminescence Spectroscopy
• Analyze the material properties to derive optimization strategies for DFB integration
• Incorporate results into the realization of laser diodes with integrated buried gratings

Your profile

• Enrolled in a Master’s degree program in Physics, Electrical Engineering, Photonics, Physical Engineering, or a related field
• Prior knowledge in optoelectronics, measurement technology, and applied physics
• Strong interest in experimental research and semiconductor materials
• Start date: as soon as possible

Our offer

• A friendly and supportive team that is always available to help and advise you
• A modern workplace located in Berlin-Adlershof with excellent public transport connections
• Exciting practical experience and the opportunity to gain valuable insights into applied research

We look forward to receiving your online application. To apply, please click on “Apply online” and submit your complete application documents by August 28, 2025.

For any questions regarding the application, please contact Dr. Johannes Enslin, Tel.: [phone], E-Mail: [e-mail] & Prof. Dr. Markus Weyers, Tel.: [phone], E-Mail: [e-mail]