Master Thesis Characterization of Dynamic Behavior in Bidirectional GaN HEMTs

Robert Bosch Group; Reutlingen; Vor Ort; EUR 40.000 - 60.000; Vollzeit

Zusammenfassung

An innovative company is seeking a motivated Master's student to explore the dynamic behavior of cutting-edge bidirectional GaN HEMTs. This exciting opportunity involves extending measurement setups, developing test fixtures, and validating simulation models, all while contributing to a publicly-funded project. Join a collaborative environment where your ideas will shape the future of power electronics. If you are eager to learn and tackle complex challenges, this role offers a unique chance to enhance your skills and make a meaningful impact in the field.

Qualifikationen

• Master studies in Electrical Engineering or a comparable field.
• Familiarity with circuit design and measurement of electronic systems.

Aufgaben

• Characterize dynamic behavior of bidirectional GaN HEMTs.
• Develop test fixtures for Gate-Charging and Double-Pulse-Tests.
• Support a publicly-funded project and a doctoral thesis.

Kenntnisse

Python

MATLAB

Circuit Design

Power Electronics

Semiconductors

Ausbildung

Master in Electrical Engineering

Jobbeschreibung

Master Thesis Characterization of Dynamic Behavior in Bidirectional GaN HEMTs

• Full-time

At Bosch, we shape the future by inventing high-quality technologies and services that spark enthusiasm and enrich people’s lives. Our promise to our associates is rock-solid: we grow together, enjoy our work, and inspire each other.

Join us and feel the difference.

The Robert Bosch GmbH is looking forward to your application!

Bidirectional transistors are an emerging class of power devices capable of blocking voltage in both directions, thanks to two independently controlled gate electrodes. Through monolithic integration, bidirectional GaN High-Electron-Mobility-Transistors (HEMTs) can be realized using only a quarter of the chip area required by two discrete unidirectional devices in a common-drain configuration. This technology is pivotal for enabling compact and efficient next-generation power converter topologies.

During your Master thesis, you will:

1. Extend an existing measurement setup to accurately characterize the dynamic behavior of state-of-the-art monolithic bidirectional GaN HEMTs.
2. Develop a test fixture for Gate-Charging and Double-Pulse-Tests to independently bias the two gate electrodes, allowing examination of the Device-Under-Test in both operating modes.
3. Compare measurement results to simulations of an existing compact model to validate and enhance modeling concepts.
4. Support a publicly-funded project and a doctoral thesis through your work.

Minimum Requirements:

• Education: Master studies in Electrical Engineering or a comparable field.
• Experience and Knowledge: Familiarity with circuit design, layout, measurement of electronic systems; proficiency in Python/MATLAB; a strong background in power electronics and semiconductors is a plus.
• Personality and Working Practice: Eager to learn, capable of tackling complex challenges, developing innovative solutions independently, and communicating effectively within a team.
• Languages: Fluent in English; German is a plus.

Start: According to prior agreement
Duration: 6 months

Requirement: Enrollment at university. Please attach your CV, transcript of records, examination regulations, and if applicable, a valid work and residence permit.

Diversity and inclusion are integral to our corporate culture. We welcome all applications regardless of gender, age, disability, religion, ethnicity, or sexual orientation.

Need further information about the job?
Magnus Haitz (Functional Department)
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