High-Voltage Power Semiconductor Engineer (SiC)

StudySmarter

Villach

Hybrid

EUR 70.000 - 90.000

Vollzeit

Vor 13 Tagen
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Zusammenfassung

Infineon is seeking a Product Development Engineer to join its Research & Development team in Villach, Austria. You will drive development of power semiconductor products for high voltage e-mobility and design SiC MOSFETs and related components, while shaping new products through requirements and specs.

The role requires 2+ years in the semiconductor industry, strong knowledge of device physics, and programming ability (Python). English is essential; German is a plus.

Qualifikationen

  • Master's or PhD in Physics or Electrical/Electronic Engineering or a related field.
  • 2+ years of technical working experience in semiconductor industry.
  • Deep knowledge of semiconductor physics and power devices, preferably high voltage SiC devices.

Aufgaben

  • Be responsible for the development of power semiconductor products for high voltage e-mobility applications.
  • Design discrete and bare products like SiC MOSFETs electrically, mechanically and thermally.
  • Contribute to the definition of new products through requirement gathering and specification tailoring.
  • Define characterization plans and derive inputs for the product datasheet.
  • Participate in and drive risk assessments and FMEAs.

Kenntnisse

Semiconductor physics
Power devices
FE/BE interaction
Innovative mindset
English communication

Ausbildung

Master's or PhD in Physics or Electrical/Electronic Engineering

Tools

Python

Jobbeschreibung

Infineon is seeking a Product Development Engineer to join its Research & Development team in Villach, Austria. You will drive development of power semiconductor products for high voltage e-mobility and design SiC MOSFETs and related components, while shaping new products through requirements and specs.

The role requires 2+ years in the semiconductor industry, strong knowledge of device physics, and programming ability (Python). English is essential; German is a plus.

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