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Micron Technology, Inc seeks a Staff Memory Design Engineer in Richardson, Texas, to design and analyze digital and analog circuits for memory products. You will collaborate across various teams to ensure optimal manufacturing functions, cost, quality, and customer satisfaction.
The role requires strong analytical and problem-solving skills along with experience in CMOS design and DRAM architecture. A BS or MS in Electrical Engineering and 6 years of relevant experience are preferred.
Req ID: JR101099 Staff Memory Design Engineer, HBM. Our vision is to transform how the world uses information to enrich life for all. Micron Technology is a world leader in innovating memory and storage solutions that accelerate the transformation of information into intelligence, inspiring the world to learn, communicate and advance faster than ever. As a Design Engineer at Micron Technology, Inc., you will be responsible for designing and analyzing digital and analog circuits used in the development of memory products. We are engaged in developing groundbreaking silicon‑to‑systems solutions – right from technology development and advanced memory designs to product development, systems design and validation resulting in world class memory solutions. In this position, you will collaborate with Micron’s various design and verification teams all over the world and support the efforts of groups such as Product Engineering, Test, Probe, Process Integration, Assembly and Marketing to proactively design products that optimize all manufacturing functions and assure the best cost, quality, reliability, time‑to‑market, and customer satisfaction.
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Micron is proud to be an equal opportunity workplace and is an affirmative action employer. All qualified applicants will receive consideration for employment without regard to race, color, religion, sex, sexual orientation, age, national origin, citizenship status, disability, protected veteran status, gender identity or any other factor protected by applicable federal, state, or local laws.