SRAM Process Development Engineer

Texas Instruments

Dallas (TX)

On-site

USD 85,000 - 115,000

Full time

14 days+

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Job summary

Texas Instruments in Dallas is seeking an experienced professional for SRAM memory device development. You will work with a talented team to create production-worthy reliable memory technology while managing device definitions and collaborating with various design groups.

The role involves SRAM bitcell design, process integration, and driving yield qualification, providing a significant opportunity to innovate in memory solutions for TI customers.

Qualifications

  • Strong background in SRAM bitcell design and process integration.
  • Experience with experiments definition and generation (SWR/DOE).
  • Data analysis skills for device characterization.

Responsibilities

  • Develop and deliver high-density, reliable memory technology.
  • Manage device definition and delivery.
  • Drive SRAM yield and qualification.

Job description

Job Description:

Being responsible for SRAM memory device development, you will join a small development team with talented and driven contributors to deliver high-density, production-worthy, reliable memory technology on schedule and within budget. You will work with development wafer fabrication facilities to manage device definition, creation, demonstration, and delivery and work with multiple design groups to capture requirements and to evaluate tradeoffs providing a unique opportunity to create SRAM memory solutions for TI customers. Highly visible position interacting with multiple business groups, development groups, and fabrication facilities. You will be involved in innovative pathfinding projects.

Opening is within Advanced Technology Development Department of the Technology and Manufacturing Group. Responsibilities include SRAM bitcell design, process integration, SWR/DOE (experiments) definition and generation, test structure definition, characterization, data analysis, design rule generation, process control document generation, device characterization, device simulation, driving SRAM yield and qualification.

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