Senior RF Power Amp Design Engineer (GaAs/GaN) – Up to $200k

Octagon Group

Chicago (IL)

On-site

USD 180,000 - 220,000

Full time

6 days ago
Be an early applicant

Get a reply from this employer

Your resume and cover letter, tailored to exactly what they’re hiring for.

Get past ATS filters

Job summary

Octagon Group in Chicago, IL is seeking an accomplished RF Power Amplifier Design Engineer to own the full lifecycle of high‑power RF amplifier design, GaAs and GaN integration, and thermal management. This on‑site role offers exposure to advanced semiconductor architectures and a competitive compensation package.

In this technical leadership position you will drive simulations, tape-out activities, and cross‑functional collaboration with layout, packaging, and test teams to deliver

Qualifications

  • Minimum of 5+ years of RF power amplifier design and active circuit development.
  • Expertise in GaAs, GaN, and LDMOS transistor technologies.
  • Proficient with RF CAD tools: Keysight ADS, AWR Microwave Office, Ansys HFSS.
  • Experience with lab test equipment: VNAs, signal generators, spectrum analyzers, power meters.
  • Strong impedance matching, stability analysis, thermal management, and linearization knowledge.
  • Mandatory US citizenship or Green Card holder status for Chicago operations.

Responsibilities

  • Architect, design, and optimize high-efficiency RF power amplifiers and MMIC circuits.
  • Perform simulations: load-pull, S-parameter, harmonic balance; validate with measurements.
  • Implement linearization such as DPD and envelope tracking.
  • Collaborate with layout, packaging, and test teams during hardware prototyping.
  • Ensure compliance with military, aerospace, and telecommunications specs.
  • Maintain design documentation and test reports.

Skills

Power amplifier design
GaAs/GaN/LDMOS
RF circuit debugging
Impedance matching
Thermal management
RF test instrumentation

Education

Bachelor/Master/PhD in Electrical Engineering or related

Tools

Keysight ADS
AWR Microwave Office
Ansys HFSS

Job description

Octagon Group in Chicago, IL is seeking an accomplished RF Power Amplifier Design Engineer to own the full lifecycle of high‑power RF amplifier design, GaAs and GaN integration, and thermal management. This on‑site role offers exposure to advanced semiconductor architectures and a competitive compensation package.

In this technical leadership position you will drive simulations, tape-out activities, and cross‑functional collaboration with layout, packaging, and test teams to deliver

Get your free, confidential resume review.

or drag and drop your file here.

Similar jobs

Similar jobs worth comparing

RF Power Amplifier Design Engineer (GaAs/GaN, MMIC & RF Power) | Octagon Group | Chicago, IL
RF Power Amplifier Design Engineer (GaAs/GaN, MMIC & RF Power) | Octagon Group | Chicago, IL

Octagon Group • Chicago (IL)

On-site
USD 180,000 - 220,000
GaN RF Power Amplifier Design Engineer — On‑Site Chicago
GaN RF Power Amplifier Design Engineer — On‑Site Chicago

Octagon Group • Chicago (IL)

On-site
USD 150,000 - 200,000
Relocation assistance
Stock options
RF Design Engineer - Power Amplifiers
RF Design Engineer - Power Amplifiers

Octagon Group • Chicago (IL)

On-site
USD 150,000 - 200,000
Relocation assistance
Stock options
Senior RF/MMIC Amplifier Design Engineer (GaAs/GaN) - Remote
Senior RF/MMIC Amplifier Design Engineer (GaAs/GaN) - Remote

Analog Devices, Inc. • Chelmsford (MA)

Remote
USD 131,000 - 190,000
Radio Frequency Design Engineer
Radio Frequency Design Engineer

Accelerate Professional Talent Solutions • Hanover Park (IL)

On-site
USD 82,656 - 96,432
Direct involvement in engineering processes
Advanced facility committed to quality
Opportunity to solve complex RF problems
RF Design Engineer — GaN/LDMOS Power Amplifiers
RF Design Engineer — GaN/LDMOS Power Amplifiers

Accelerate Professional Talent Solutions • Hanover Park (IL)

On-site
USD 82,656 - 96,432
Direct involvement in engineering processes
Advanced facility committed to quality
Opportunity to solve complex RF problems
Senior RF Power Amplifier Design Engineer
Senior RF Power Amplifier Design Engineer

Capgemini • Dallas

On-site
USD 73,000 - 174,000
Senior RF/MMIC Amplifier Design Architect
Senior RF/MMIC Amplifier Design Architect

Analog Devices, Inc. • Mountain Home (ID)

On-site
USD 157,000 - 227,000
Discretionary bonus
Medical, vision and dental coverage
401k
+2
Senior RF Design Engineer: High-Power GaN/GaAs Frontend
Senior RF Design Engineer: High-Power GaN/GaAs Frontend

Tagoretech • Arlington Heights (IL)

On-site
USD 90,000 - 110,000
401(k)
401(k) matching
Flexible spending account
+4
Senior RF/MMIC Amplifier Architect (GaAs/GaN)
Senior RF/MMIC Amplifier Architect (GaAs/GaN)

Analog Devices, Inc. • Kansas

Hybrid
USD 157,000 - 227,000
Discretionary bonus
Medical benefits
401k