RF/mm-Wave GaN Power Amplifier Design Engineer

Falcomm; Atlanta (GA); On-site; USD 110,000 - 170,000; Full time

Benefits offered by this job

Equity Package

Comprehensive Health, Dental, and Vis​

401(k) Retirement Plan

Paid Time Off (PTO) and Sick Leave

Job summary

Falcomm is seeking an RF/mm-Wave GaN Power Amplifier Design Engineer to drive advancement in energy-efficient RF PA technologies. You will design, simulate, test, and optimize amplifiers for high-frequency applications, collaborating across disciplines to push performance while meeting reliability and thermal targets.

Ideal candidates have a strong RF IC/PA background, GaN tapeout experience, and fluency with Cadence, ADS, SystemVue and HFSS.

Qualifications

• Master's degree with RF/microwave ICs design emphasis.
• 3+ years in RF PA design up to 60 GHz and GaN tapeout experience.
• Strong understanding of RF GaN device physics and PA architectures.

Responsibilities

• Design and develop RF power amplifiers for SATCOM, Wi‑Fi, and cellular.
• Create test plans, perform EM design on die, package and PCB.
• Present design reviews covering IC, EM, simulation and thermal data.
• Collaborate across teams and support product development from concept to mass production.

Skills

RF PA design

GaN technology

HFSS

Cadence Virtuoso

Keysight ADS

SystemVue

EM design

Pex extraction

EMC/EMI concepts

Education

Master's in Electrical Engineering (RF focus)

PhD in Electrical Engineering (preferred)

Tools

Cadence Virtuoso

Keysight ADS

Keysight SystemVue

Siemens Calibre

HFSS

Momentum

EMX

Job description

Are you passionate about pioneering innovations in the semiconductor industry? At Falcomm, we are on a mission to transform semiconductor technologies into tangible, real-world solutions. We specialize in crafting energy-efficient power amplifier products that set the standard for excellence in performance. As a RF/mm-Wave GaN Power Amplifier Design Engineer, you will join our dedicated team of experts who are committed to pushing the boundaries of semiconductor technology. Your role will be instrumental in shaping products that not only meet but exceed our customers' expectations.

We are looking for an individual who thrives in a fast-paced environment, is eager to contribute to cutting‑edge projects, and is motivated by the challenge of creating real-world applications of semiconductor innovation. We invite you to come and make your mark at Falcomm, where innovation meets sustainability in energy‑efficient solutions. Become part of a dynamic team where your skills and ideas can truly elevate the field of semiconductors and help us fulfill our vision of delivering unmatched power amplifier technologies.

RESPONSIBILITIES:

• Design and develop RF power amplifiers for applications such as SATCOM, Wi‑Fi, and cellular.
• Collaborate effectively with colleagues at all levels within the organization, demonstrating problem‑solving skills, data analysis, and critical thinking.
• Create test plans for RF power amplifier designs to ensure reliability and performance under real‑world conditions.
• Perform EM design using HFSS on die, on package and on PCB.
• Present detailed design reviews covering IC, package, electromagnetic (EM), simulation results, measurement data, and thermal considerations; all related to continuous improvement of RF design processes.
• Stay on top of industry trends and advancements in semiconductor technology.
• Support all stages of product development, from concept to mass production.

QUALIFICATIONS:

• Master's degree in Electrical Engineering or a related field, with an educational emphasis on RF/microwave integrated circuits design.
• 3+ years of experience in RF power amplifier design and development up to 60GHz.
• PA tapeout experience using GaN technologies.
• Familiarity with RF GaN device physics, including trapping and thermals, and transistor models.
• Strong knowledge of power amplifiers including modes of operation, matching, bias, and architecture considerations.
• Strong circuit design skills, experience with IC layout, PEX extraction, performing electromigration analysis, and simulation of both linear and non‑linear behavior of RF PAs to meet performance targets such as gain, linearity, power, and bandwidth.
• Strong EM knowledge of passive components including couplers, baluns, and matching networks.
• Proficiency in simulation and design tools such as Cadence Virtuoso, Keysight ADS, Keysight SystemVue, Siemens Calibre, HFSS, Momentum, and EMX.
• Knowledge of RF transceiver architectures, digital communication systems, spread spectrum, single and multi-carrier techniques and modulation types such as QPSK, APSK and QAM.

Preferred skills:

• PhD in Electrical Engineering or a related field, with an educational emphasis on RF/microwave integrated circuits design.
• Understanding of PA thermal and packaging constraints.
• RF/microwave design experience in the Ku, K, Ka, Q, or V‑band frequency ranges.
• Familiarity with radio related test equipment such as spectrum analyzers, vector signal analyzers, vector signal generators, and network analyzers, and hands‑on experience in a lab with equipment for RF testing and measurement.

• Equity Package
• Comprehensive Health, Dental, and Vision Insurance
• 401(k) Retirement Plan
• Paid Time Off (PTO) and Sick Leave

DISCLOSURE

• Falcomm is an Equal Opportunity Employer; employment with Falcomm is governed on the basis of merit, competence and qualifications and will not be influenced in any manner by race, color, religion, gender, national origin/ethnicity, veteran status, disability status, age, sexual orientation, gender identity, marital status, mental or physical disability or any other legally protected status.
• Applicants wishing to view a copy of Falcomm’s Affimative Action Plan for veterans and individuals with disabilities, or applicants requiring reasonable accommodation to the application/interview process should notify Falcomm.
• To conform to U.S. Government export regulations, including the International Traffic in Arms Regulations (ITAR) you must be a U.S. citizen, lawful permanent resident of the U.S., protected individual as defined by 8 U.S.C. 1324b(a)(3), or eligible to obtain the required authorizations from the U.S. Department of State.