Senior Principal Microelectronics Device Engineer – GaN/InP

Northrop Grumman

Manhattan Beach (CA)

On-site

USD 114,000 - 213,000

Full time

14 days+
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Benefits offered by this job

Health insurance
Life and disability insurance
Savings plan
Company paid holidays and PTO

Job summary

Northrop Grumman is seeking a Microelectronics Device Engineer for the Space Park Foundry in Redondo Beach, CA. The role focuses on developing and maturing III-V semiconductor technologies, including GaN and InP, within a fast-paced, multidisciplinary team.

The candidate will lead transistor design, device development, and RF characterization, collaborating closely with process engineers, circuit designers, and test engineers. U.S.

Qualifications

  • Bachelor of Science in Electrical Engineering or related STEM with 5+ years of relevant experience (3 with a Master’s, 0 with a PhD).
  • Experience in solid-state or semiconductor materials physics and compound semiconductor device physics.
  • Experience with semiconductor device processing and project or team leadership.

Responsibilities

  • Lead development and maturation of novel III-V semiconductor technologies including GaN and InP.
  • Perform millimeter wave transistor design and simulation and experimental device development.
  • Conduct root cause analysis and RF device characterization in a lab environment.
  • Collaborate with process engineers, circuit designers, and test engineers.

Skills

Semiconductor device physics
RF mmW design
Lab experimentation
Leadership experience

Education

Bachelor of Science in Electrical Engineering or related STEM
Master's or PhD (preferred)

Tools

Semiconductor device processing
RF test equipment

Job description

Northrop Grumman is seeking a Microelectronics Device Engineer for the Space Park Foundry in Redondo Beach, CA. The role focuses on developing and maturing III-V semiconductor technologies, including GaN and InP, within a fast-paced, multidisciplinary team.

The candidate will lead transistor design, device development, and RF characterization, collaborating closely with process engineers, circuit designers, and test engineers. U.S.

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