Senior Lead Tech Staff — Advanced DRAM Overlay

Micron Technology, Inc.; Boise (ID); On-site; USD 140,000 - 200,000; Full time

Benefits offered by this job

Medical, dental and vision plans

Paid time off

Paid holidays

Job summary

Micron Technology, Inc. seeks a Lead Senior Member of Technical Staff, Advanced DRAM Overlay Engineer to drive overlay technology for future DRAM nodes. You will lead projects across lithography, metrology, and bonding while mentoring engineers and coordinating with process teams and suppliers.

You will apply data analytics, modeling, and experimental approaches to push overlay performance, and own the technical direction for high-impact memory technologies.

Qualifications

• Bachelors in engineering or related field required.
• 10+ years in overlay, lithography, metrology, or related semiconductor tech.

Responsibilities

• Lead development of overlay solutions for advanced DRAM and bonded device technologies.
• Develop overlay specifications, measurement strategies, and process control methodologies.
• Apply modeling, experimentation, and data analysis to improve overlay performance and capability.
• Collaborate with lithography, metrology, integration, bonding, and manufacturing teams to solve technical challenges.
• Drive supplier engagement and qualification of new overlay capabilities and technologies.

Skills

Overlay engineering

Overlay control

Lithography

Metrology

Data analysis

Process integration

Wafer bonding

Cross-team influence

Communication

Education

Bachelor's in engineering

Master's/PhD preferred

Tools

AI/Analytics

Automation tools

Job description

Micron Technology, Inc. seeks a Lead Senior Member of Technical Staff, Advanced DRAM Overlay Engineer to drive overlay technology for future DRAM nodes. You will lead projects across lithography, metrology, and bonding while mentoring engineers and coordinating with process teams and suppliers.

You will apply data analytics, modeling, and experimental approaches to push overlay performance, and own the technical direction for high-impact memory technologies.