Lead Engineer, Advanced DRAM & Memory Architecture

Micron Technology, Inc.; Boise (ID); On-site; USD 140,000 - 190,000; Full time

Benefits offered by this job

Medical, dental and vision plans

Paid time off

Paid holidays

Job summary

Micron Technology, Inc. seeks a highly skilled memory technology expert to lead the development of Advanced DRAM architectures, from concept through silicon implementation and productization.

You will collaborate across process integration, device engineering, materials science, characterization, and reliability teams to transform innovative concepts into scalable memory solutions, driving performance, variability control, and reliable operation.

Qualifications

• MS or PhD in Physics, Materials Science & Engineering, Electrical Engineering, or a related technical field.
• 7 to 10 years of semiconductor proven experience in memory technology, process integration, or device development.
• Deep understanding of memory technologies (DRAM, NAND) and emerging architectures.
• Experience leading cross-functional technical projects and applying meticulous experimental design and data analysis.

Responsibilities

• Lead process integration efforts for Advanced DRAM technologies and related components.
• Develop and integrate memory device architectures from concept to silicon implementation.
• Design experiments to evaluate performance, reliability, and failure mechanisms.
• Partner with cross-functional teams to optimize processes and deliver product-ready solutions.
• Drive yield improvements through analysis of inline, defect, and parametric data.

Skills

Memory technologies

Cross-functional leadership

Data analysis

Semiconductor process integration

Education

MS or PhD in Physics/Materials Science/EE

Job description

Micron Technology, Inc. seeks a highly skilled memory technology expert to lead the development of Advanced DRAM architectures, from concept through silicon implementation and productization.

You will collaborate across process integration, device engineering, materials science, characterization, and reliability teams to transform innovative concepts into scalable memory solutions, driving performance, variability control, and reliable operation.