Senior High-Voltage LNDMOS Device Engineer

Diodes-Incorporated

South Portland (ME)

On-site

USD 143,000 - 219,000

Full time

39 hours ago
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Benefits offered by this job

Competitive benefits package
Medical, dental, vision coverage
401k with company match
Paid time off

Job summary

Diodes, Incorporated is seeking a Sr Level Semiconductor Tech High Voltage LNDMOS Device Engineer in South Portland, ME. The role focuses on designing, developing, and optimizing high‑voltage (7–120 V) LNDMOS devices with junction or deep-trench isolation, bridging device physics and manufacturing.

You will collaborate across device design, process, test, packaging, and product engineering to deliver robust LNDMOS products and guide customers on integration.

Qualifications

  • Advanced degree in a relevant field with emphasis on semiconductor devices.
  • 5–10 years of direct power semiconductor device design and fabrication experience.
  • Experience with high-voltage LNDMOS/LDMOS and isolation methods such as deep trench or guard rings.

Responsibilities

  • Lead design of high‑voltage LNDMOS devices using CAD/TCAD tools.
  • Collaborate with process engineers to define flow and materials.
  • Characterize devices electrically, thermally, and reliability-wise.
  • Research new architectures (e.g., trench, RESURF) to improve performance.
  • Work with cross‑functional teams to ensure product launches.
  • Create design docs, simulations, and test reports for stakeholders.
  • Provide technical guidance to applications, field teams, and customers.

Skills

CAD/TCAD design
Semiconductor physics
Device reliability
Data-driven problem solving
Cross-functional collaboration
Analytical thinking
Verbal and written communication

Education

Master’s or Doctoral degree in EE/Physics/Materials Science

Tools

Synopsys Sentaurus
Silvaco Atlas

Job description

Diodes, Incorporated is seeking a Sr Level Semiconductor Tech High Voltage LNDMOS Device Engineer in South Portland, ME. The role focuses on designing, developing, and optimizing high‑voltage (7–120 V) LNDMOS devices with junction or deep-trench isolation, bridging device physics and manufacturing.

You will collaborate across device design, process, test, packaging, and product engineering to deliver robust LNDMOS products and guide customers on integration.

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