RF Hardware Engineer – High-Frequency Data Acquisition

Horiba Instruments; Reno (NV); On-site; USD 110,000 - 150,000; Full time

Benefits offered by this job

401(k) matching

Medical, dental, vision insurance

Paid holidays & vacation

Educational reimbursement

Commuter benefits

Job summary

HORIBA Instruments, based in Reno, NV, is seeking an experienced RF Hardware Engineer to develop and qualify RF data-acquisition hardware for high-speed voltage-current-impedance measurements used in semiconductor RF plasma generator applications. The role is located at HORIBA Semiconductor US R&D Technology Center in Reno, NV.

The candidate will design RF circuits, perform simulations, prototype and validate hardware, and collaborate with PCB teams to ensure optimal RF performance.

Qualifications

• Bachelor’s degree in electrical engineering or related field.
• Minimum 5 years of RF data acquisition or RF power control hardware design.
• Proficiency with RF simulation and design tools (Comsol, Cadence, Ansys, SPICE).
• Hands-on experience with RF test equipment (spectrum analyzers, network analyzers, signal generators).
• Familiarity with RF/high-speed PCB layout and CAD tools.
• Strong analytical and problem-solving skills.

Responsibilities

• Designs RF circuits, probes/sensors, and systems for high-frequency data acquisition.
• Conducts RF circuit simulations and modeling with CAE tools.
• Prototypes, tests, and validates RF hardware in lab environments.
• Collaborates with PCB designers to optimize RF layouts.
• Documents schematics, layout guidelines, test procedures, and design verification reports.

Skills

RF data acquisition

RF power control hardware design

RF circuit design

RF simulation tools

RF test equipment

PCB layout for RF

Analytical and problem-solving skills

Education

Bachelor’s degree in Electrical Engineering

Master’s or PhD preferred

Tools

Comsol

Cadence

Mentor Graphics

Ansys

SPICE

Job description

HORIBA Instruments, based in Reno, NV, is seeking an experienced RF Hardware Engineer to develop and qualify RF data-acquisition hardware for high-speed voltage-current-impedance measurements used in semiconductor RF plasma generator applications. The role is located at HORIBA Semiconductor US R&D Technology Center in Reno, NV.

The candidate will design RF circuits, perform simulations, prototype and validate hardware, and collaborate with PCB teams to ensure optimal RF performance.