RF Hardware Engineer I — High-Frequency Data Acquisition

HORIBA; Reno (NV); On-site; USD 110,000 - 160,000; Full time

Benefits offered by this job

401(k) plan with match

Medical, dental, vision insurance

Job summary

HORIBA Semiconductor US R&D is seeking an experienced RF Hardware Engineer to develop and qualify RF data‑acquisition hardware for high‑speed voltage, current, and impedance measurements in plasma generator and matching network applications. The candidate will work at the HORIBA Semiconductor US R&D Technology Center in Reno, NV.

The role requires a minimum of 5 years in RF data acquisition or RF power hardware design, strong RF simulation skills, and hands‑on experience with RF test equipment.

Qualifications

• Bachelor's degree in electrical engineering or related field required; Master preferred.
• Minimum 5 years in RF data acquisition or RF power hardware design.
• Experience with RF simulation and design tools (Comsol, Cadence, Mentor, Ansys, SPICE).
• Hands-on RF test equipment experience (spectrum/network analyzers, signal generators).
• RF PCB layout techniques for high-speed data acquisition circuits.

Responsibilities

• Design RF circuits, probes/sensors and systems for high-frequency data acquisition.
• Conduct RF circuit simulation, analysis, and modeling.
• Prototype, test, and validate RF hardware designs in lab.
• Collaborate with PCB designers to follow RF layout guidelines.
• Characterize and optimize RF components and subsystems.
• Generate documentation: schematics, layouts, test procedures, and reports.

Skills

RF design

RF simulation

Lab testing

PCB layout RF

Analytical skills

Education

Bachelor's degree in Electrical Engineering

Master's degree preferred

Tools

Comsol

Cadence

Mentor Graphics

Ansys

SPICE

Job description

HORIBA Semiconductor US R&D is seeking an experienced RF Hardware Engineer to develop and qualify RF data‑acquisition hardware for high‑speed voltage, current, and impedance measurements in plasma generator and matching network applications. The candidate will work at the HORIBA Semiconductor US R&D Technology Center in Reno, NV.

The role requires a minimum of 5 years in RF data acquisition or RF power hardware design, strong RF simulation skills, and hands‑on experience with RF test equipment.