RF Device Engineer, R&D

Tower Semiconductor; Newport Beach (CA); On-site; USD 140,000 - 156,000; Full time

Benefits offered by this job

Competitive salary based on experience

Inquiries from all levels welcomed

Job summary

A leading semiconductor manufacturer located in Newport Beach, California, is searching for a skilled Device Engineer. The ideal candidate will have experience in the semiconductor industry, specifically with RF SOI and RF CMOS technologies. Responsibilities include research, design of test structures, and customer interaction. A PhD is preferred alongside at least 3 years of experience. The position offers a competitive salary ranging from $140,000 to $156,000 based on experience and capabilities.

Qualifications

• PhD preferred; recent grads with RF technology experience encouraged.
• Minimum 3 years as a device engineer in the semiconductor industry.
• Strong understanding of device physics and process integration.

Responsibilities

• Research and develop specialty process technologies for semiconductors.
• Design test structures and analyze experimental results.
• Lead process technology development projects.

Skills

RF technologies/devices

Device physics

Process integration

Analytical skills

Problem solving

Customer interaction

Education

PhD in engineering or physics (preferred)

Masters or Bachelor's degree in relevant field

Tools

Synopsys TCAD

Cadence Virtuoso

Job description

Responsibilities

• Research and development of specialty process technologies used in the manufacture of semiconductors, specifically RF SOI, RF CMOS, and SiGe BiCMOS technologies.
• Develop methods, techniques, and evaluation criteria, exercising independent judgment.
• Design test structures, integrate processes, simulate processes and devices, and analyze experiment lots.
• Interact directly with customers to assess their needs and participate in joint development.

Qualifications & Requirements

• PhD preferred, Masters or Bachelor's degree in engineering discipline or physics. RECENT PhD grads with experience in RF technologies/devices encouraged to apply.
• Minimum 3 years experience as a device engineer in the semiconductor industry, working with sub‑micron devices, is required.
• Strong understanding of device physics, process integration, and characterization of CMOS or BiCMOS technologies.
• Experience with RF‑CMOS and SOI technologies is preferred.
• Experience with RF characterization is a plus.
• Experience with Synopsys TCAD tools and Cadence Virtuoso is a plus.
• Very strong analytical and people skills.
• Use of multi-disciplinary approaches to problem solving.
• Competence in emerging technology areas important to Company.
• Experience working with a semiconductor fab and fab environment.
• Ability to lead various process technology development projects in the company’s product lines.
• Research new applications of the company’s technology portfolio.
• Design new devices and coordinate experiments for technology development and yield enhancement for state‑of‑the‑art RF and High Performance Analog technologies.
• Define process experiments and manage development and engineering wafers‑in‑process. Analyze parametric results and characterize devices using DC and RF techniques.
• Use TCAD tools to assist with device and process development.
• Create and characterize test structures for device design and optimization.
• Work with the process engineering team to develop unit processes in support of new technologies.
• Support customer engineering on various customer requests and communicate directly with customers as needed.
• Support transfer of newly developed processes to production.

Perks & Benefits (US)

• Pay range: Expert - Staff: $140,000 - $156,000.
• Tower Semiconductor encourages inquiries from talent at all levels where pay will be based on experience.