NAND Quality & Reliability R&D Engineer

Solidigm

San Jose (CA)

Hybride

USD 140 000 - 255 000

Plein temps

14 jours+

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Avantages offerts par ce poste

RSU eligibility
Restricted cash unit eligibility
Cash bonus programs
Medical, dental, vision benefits
401(k) company match

Résumé du poste

Solidigm is seeking a semiconductor memory engineer to design, plan, and execute NAND memory cell and array characterization experiments to evaluate performance and reliability.

You will develop and optimize trims to minimize program and read disturb, and to optimize performance and power, without compromising reliability. Collaboration with Device, Design, Reliability, and Product/Test teams is key to advancing SSD technology.

Qualifications

  • Bachelor’s in electrical engineering, microelectronics, or a closely related field.
  • 2+ years of industry experience in semiconductor memory technologies and products.
  • Deep understanding of NAND cell and array operations, including array reliability physical mechanisms and characterization techniques.
  • Strong foundation in semiconductor device physics and process flows.
  • Proficiency in statistical analysis methodologies and tools.
  • Hands-on programming experience in C, C++, Python, and/or JMP.
  • Proven ability to thrive in a fast-paced, cross-functional team environment.
  • Strong analytical and problem-solving skills with attention to detail.
  • Excellent communication and presentation skills, with the ability to convey complex technical concepts to diverse audiences.

Responsabilités

  • Design, plan, and execute NAND memory cell and array characterization experiments to evaluate performance and reliability.
  • Develop and optimize trims to minimize program and read disturb, directly impacting product quality.
  • Develop and optimize trims to optimize performance and power (tPROGRAM, tREAD, Icc), without impacting reliability and endurance capabilities.
  • Apply NAND device physics principles to explain and interpret relationships between experimental data and trim parameters.
  • Conduct comprehensive data analysis to identify and communicate trade-offs across multiple parameters of interest.
  • Use NAND device physics knowledge and problem-solving skills to design experiments, identify product failure mechanisms, and implement effective solutions.
  • Collaborate cross-functionally with Device, Design, Reliability, and Product/Test Engineering teams to design, test, and deeply innovative method to improve performance and reliability.

Connaissances

C/C++
Python
JMP
Statistical analysis
Communication

Formation

Bachelor’s in Electrical Engineering or Microelectronics
Master’s or PhD (preferred)

Outils

JMP

Description du poste

Solidigm is seeking a semiconductor memory engineer to design, plan, and execute NAND memory cell and array characterization experiments to evaluate performance and reliability.

You will develop and optimize trims to minimize program and read disturb, and to optimize performance and power, without compromising reliability. Collaboration with Device, Design, Reliability, and Product/Test teams is key to advancing SSD technology.

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